Liquid crystal display device and method of manufacturing the same
View Patent ↗A thin-film transistor includes a gate electrode made of metal, a light transmissive gate insulating film that covers the gate electrode, a semiconductor film that overlaps with the gate electrode through the gate insulating film, and a source electrode and a drain electrode, made of metal, and spaced from each other. The gate electrode and the semiconductor film have respective through-holes communicated with each other so that the gate insulating film enters an inside of the through-holes. The gate insulating film has an area of the inside of the through-holes of the gate electrode and the semiconductor film. The source electrode and the drain electrode pass through the inside of the through-holes of the gate electrode and the semiconductor film so as to overlap with a part of the area of the inside of the through-hole of the gate insulating film and avoid a remaining portion thereof.
1. A liquid crystal display device comprising:
a first substrate including a pixel area which displays an image, and a peripheral area which is disposed outside of the pixel area;
a driver circuit including thin film transistors and formed in the peripheral area of the first substrate;
a second substrate arranged to face the first substrate; and
a sealing material disposed to surround the pixel area in the peripheral area of the first substrate, including a light curing resin, and bonding the first substrate and the second substrate together,
wherein apart of the sealing material overlaps with at least a part of the thin film transistors,
wherein each of the thin film transistors includes a gate electrode, a gate insulating film that covers the gate electrode, a semiconductor film that overlaps the gate electrode through the gate insulating film, and a source electrode and a drain electrode formed on the semiconductor film on a side opposite to the gate insulating film, and spaced from each other,
wherein the gate electrode has a first through-hole,
wherein an inside of the first through-hole is filled with the gate insulating film, and
wherein the semiconductor film has a second through-hole that overlaps with the first through-hole.
2. The liquid crystal display device according to claim 1 ,
wherein a part of the sealing material overlaps with the first through-hole and the second through-hole.
3. The liquid crystal display device according to claim 1 , further comprising: a passivation film having at least one layer that covers the source electrode and the drain electrode.
4. The liquid crystal display device according to claim 3 ,
wherein the passivation film includes at least one depressed portion, and
wherein the depressed portion overlaps with the first through-hole and the second through-hole.
5. The liquid crystal display device according to claim 3 ,
wherein the passivation film may include at least one projecting portion, and the projecting portion may overlap with the first through-hole and the second through-hole.
6. The liquid crystal display device according to claim 1 ,
wherein the second through-hole is larger than the first through-hole.
7. The liquid crystal display device according to claim 1 ,
wherein at least one of the source electrode and the drain electrode overlaps with the first through-hole and the second through-hole.
8. The liquid crystal display device according to claim 1 , the source electrode and the drain electrode do not overlap with the first through-hole and the second through-hole.
9. The liquid crystal display device according to claim 1 ,
wherein the semiconductor film includes a portion configuring a channel area of each thin film transistor between the source electrode and the drain electrode, and
wherein the source electrode and the drain electrode are configured so that the channel area snakes.
10. The liquid crystal display device according to claim 1 ,
wherein each of the source electrode and the drain electrode is formed into a pectinate shape having a plurality of branched portions, and
wherein one of the branched portions of the source electrode and one of the branched portions of the drain electrode are alternately arranged.
11. A liquid crystal display device manufacturing method comprising:
bonding a first substrate including a pixel area which displays an image, and a peripheral area which is disposed outside of the pixel area, on which a driver circuit including thin film transistors formed in the peripheral area is formed, and a second substrate together with a sealing material containing a light curing resin; and
irradiating the sealing material with ultraviolet rays,
wherein apart of the sealing material overlaps with at least a part of the thin film transistors,
wherein each of the thin film transistors includes a gate electrode, a gate insulating film that covers the gate electrode, a semiconductor film that overlaps the gate electrode through the gate insulating film, and a source electrode and a drain electrode formed on the semiconductor film on a side opposite to the gate insulating film, and spaced from each other,
wherein the gate electrode has a first through-hole,
wherein an inside of the first through-hole is filled with the gate insulating film,
wherein the semiconductor film has a second through-hole that overlaps with the first through-hole, and
the ultraviolet rays are applied from an outside of the first substrate toward the sealing material so as to pass through the first through-hole and the second through-hole.
12. The liquid crystal display device manufacturing method according to claim 11 ,
wherein a part of the sealing material overlaps with the first through-hole and the second through-hole.
13. The liquid crystal display device manufacturing method according to claim 11 , further comprising: forming a passivation film having at least one layer that covers the source electrode and the drain electrode.
14. The liquid crystal display device manufacturing method according to claim 13 , further comprising: forming at least one depressed portion in the passivation film, and
wherein the depressed portion overlaps with the first through-hole and the second through-hole.
15. The liquid crystal display device manufacturing method according to claim 13 , further comprising: forming at least one projecting portion in the passivation film,
wherein the projecting portion overlaps with the first through-hole and the second through-hole.
16. The liquid crystal display device manufacturing method according to claim 11 ,
wherein the second through-hole is larger than the first through-hole.
17. The liquid crystal display device manufacturing method according to claim 11 ,
wherein at least one of the source electrode and the drain electrode overlaps with the first through-hole and the second through-hole.
18. The liquid crystal display device manufacturing method according to claim 11 ,
wherein the source electrode and the drain electrode do not overlap with the first through-hole and the second through-hole.
19. The liquid crystal display device manufacturing method according to claim 11 ,
wherein the semiconductor film includes a portion configuring a channel area of each thin film transistor between the source electrode and the drain electrode, and
wherein the source electrode and the drain electrode are configured so that the channel area snakes.
20. The liquid crystal display device manufacturing method according to claim 11 ,
wherein each of the source electrode and the drain electrode is formed into a pectinate shape having a plurality of branched portions, and
wherein one of the branched portions of the source electrode and one of the branched portions of the drain electrode may be alternately arranged.