Optical element and semiconductor light emitting device using the optical element

1. An optical element, comprising:

a phosphor layer containing a phosphor which is excited by light of a first wavelength and radiates light of a second wavelength different from the first wavelength;

a first optical member provided on a first surface of the phosphor layer and configured to concentrate light in the phosphor layer; and

a second optical member provided on a second surface of the phosphor layer, which is opposite to the first surface, and configured to convert light radiated from the phosphor layer into parallel light, wherein:

the phosphor layer includes:

a plurality of first regions each containing the phosphor; and

a second region which surrounds the plurality of first regions and has a thermal conductivity higher than a thermal conductivity of the first regions, and

the first optical member concentrates light in each of the plurality of first regions.

2. The optical element of claim 1 , wherein

the first optical member is a first transparent substrate having a condensing lens.

3. The optical element of claim 1 , wherein

the first optical member is a first transparent substrate having a diffraction grating.

4. The optical element of claim 1 , wherein

the second optical member is a second transparent substrate provided on the second surface and having a collimator lens.

5. The optical element of claim 1 , wherein

the second region is made of zinc oxide, aluminum nitride, or diamond.

6. A semiconductor light emitting device, comprising:

the optical element of claim 1 ;

a light emitting element which emits the light of the first wavelength; and

a light dividing section which divides light emitted from the light emitting element into a plurality of optical paths having optical axes parallel to each other to have the optical paths enter the optical element.

7. The optical element of claim 1 , further comprising:

a thermal conductive layer provided between the phosphor layer and the first optical member or the second optical member, and having a thermal conductivity higher than a thermal conductivity of the phosphor layer.

8. The optical element of claim 7 , wherein

the thermal conductive layer is made of zinc oxide, aluminum nitride, or diamond.

9. The optical element of claim 7 , wherein

the thermal conductive layer is a multilayer film.

10. An optical element, comprising:

a phosphor layer containing a phosphor which is excited by light of a first wavelength and radiates light of a second wavelength different from the first wavelength;

a optical member provided on a first surface of the phosphor layer, including a plurality of lens, and configured to concentrate light in the phosphor layer and convert light radiated from the phosphor layer into parallel light; and

a reflective layer provided on a second surface of the phosphor layer, wherein:

the phosphor layer includes:

a plurality of first regions each containing the phosphor; and

a second region which surrounds the plurality of first regions and has a thermal conductivity higher than a thermal conductivity of the first regions,

the plurality of lens concentrates light in each of the plurality of first regions, convert light radiated from the plurality of first regions into parallel light, and

the reflective layer configured to reflect a part of light radiated from the plurality of first regions to a side of plurality of lens.

11. A semiconductor light emitting device, comprising:

the optical element of claim 10 ;

a light emitting element which emits the light of the first wavelength; and

a light dividing section which divides light emitted from the light emitting element into a plurality of optical paths having optical axes parallel to each other to have the optical paths enter the optical element.

12. The optical element of claim 10 , wherein

the second region is made of zinc oxide, aluminum nitride, or diamond.

13. A optical element, comprising:

an optical member including a first transparent substrate, and a diffraction grating and a reflecting mirror which are respectively provided on surfaces of the transparent substrate opposite to each other; and

a phosphor substrate including a phosphor layer, thermal conductive layers having a thermal conductivity higher than a thermal conductivity of the phosphor layer, and a second transparent substrate, where the phosphor layer is provided on a principal surface of the second transparent substrate via the thermal conductive layers, and contains a phosphor which is excited by light of a first wavelength and radiates light of a second wavelength different from the first wavelength, Wherein:

the optical member is provided spaced apart from the phosphor substrate so that the reflecting mirror is facing to the principal surface of the second transparent substrate,

the diffraction grating concentrates light of the first wavelength in the phosphor layer, and

the reflecting mirror configured to concentrates light in the phosphor layer and to reflect light of the second wavelength radiated from the phosphor layer.

14. A semiconductor light emitting device, comprising:

the optical element of claim 13 ;

a light emitting element which emits the light of the first wavelength; and

a light dividing section which divides light emitted from the light emitting element into a plurality of optical paths having optical axes parallel to each other to have the optical paths enter the optical element.