Non-volatile memory circuit
View Patent ↗A non-volatile memory circuit includes a non-volatile memory having a first source and drain region having a non-LOCOS offset structure and a second source and drain region having a LOCOS offset structure. A pair of switch circuits are connected in parallel to the respective first and second source and drain regions for switching voltages applied to the first and second source and drain regions so that the first source and drain region serves as a drain and the second source and drain region serves as a source in a writing mode, the second source and drain region serves as a drain and the first source and drain region serves as a source in a reading mode, and equal voltages are applied to the first source and drain region and the second source and drain region in a retention mode.
1. A non-volatile memory circuit comprising:
a non-volatile memory having a one-sided LOCOS offset structure, the non-volatile memory comprising:
a first source and drain region having a non-LOCOS offset structure, which is different from a LOCOS offset structure; and
a second source and drain region having the LOCOS offset structure;
switch circuits respectively connected to the first source and drain region and the second source and drain region;
a floating gate across which the first source and drain region and the second source and drain region are disposed;
a capacitive coupling oxide film formed on a part of the floating gate;
a control gate capacitively coupled with the part of the floating gate through intermediation of the capacitive coupling oxide film; and
a lightly doped region disposed between and in contact with a side of the first source and drain region and an end of the floating gate.
2. A non-volatile memory circuit according to claim 1 , wherein the switch circuits comprise inverters.
3. A non-volatile memory circuit comprising:
a non-volatile memory comprised of a first source and drain region having a non-LOCOS offset structure, and a second source and drain region having a LOCOS offset structure;
a pair of switch circuits connected in parallel to the first source and drain region and the second source and drain region, respectively, of the non-volatile memory;
a floating gate across which the first source and drain region and the second source and drain region are disposed;
a capacitive coupling oxide film formed on a part of the floating gate;
a control gate capacitively coupled with the part of the floating gate through intermediation of the capacitive coupling oxide film; and
a lightly doped region disposed between and in contact with a side of the first source and drain region and an end of the floating gate.
4. A non-volatile memory circuit according to claim 3 , wherein the switch circuits comprise inverters.
5. A non-volatile memory circuit according to claim 1 , wherein the switch circuits are configured to switch voltages applied to the first source and drain region and the second source and drain region; wherein in a writing mode, the first source and drain region serves as a drain; wherein in a reading mode, the second source and drain region serves as the drain; and wherein the switch circuits are controlled so that equal voltages are applied to the first source and drain region and the second source and drain region when power supply is turned on but writing and reading is not performed.
6. A non-volatile memory circuit according to claim 3 , wherein the pair of switch circuits are configured to switch voltages applied to the first source and drain region and the second source and drain region so that the first source and drain region serves as a drain and the second source and drain region serves as a source in a writing mode, the second source and drain region serves as a drain and the first source and drain region serves as a source in a reading mode, and equal voltages are applied to the first source and drain region and the second source and drain region in a retention mode in which a power supply of the non-volatile memory circuit is turned on and writing or reading is not performed.