Thermal anneal using word-line heating element
In response to detecting an event during operation of an integrated-circuit memory device containing charge-storing memory cells, an electric current is enabled to flow through a word line coupled to the charge-storing memory cells for a brief interval to heat the charge-storing memory cells to an annealing temperature range.
1. An integrated-circuit memory device comprising:
charge-storing memory cells;
a word line coupled to the charge-storing memory cells;
control circuitry to output one or more control signals in response to detecting an event during operation of the integrated-circuit memory device; and
annealing circuitry to enable electric current to flow through the word line for a limited interval, in response to the one or more control signals, to heat the charge-storing memory cells to an annealing temperature range above 250° C., the limited interval having a duration between a time shorter than a duration of an erase operation within the integrated-circuit memory device and a time not substantially longer than the duration of the erase operation.
2. The integrated-circuit memory device of claim 1 further comprising circuitry to assert a select signal on the word line to enable data to be read out of one or more of the charge-storing memory cells.
3. The integrated-circuit memory device of claim 1 wherein the control circuitry to output one or more control signals in response to detecting an event comprises control circuitry to output the one or more control signals in response to receiving an erase command, the erase command instructing the integrated-circuit memory device to erase the contents of the charge-storing memory cells.
4. An integrated-circuit memory device comprising:
charge-storing memory cells;
control circuitry to receive a sequence of erase commands, each erase command instructing an erase operation with respect to the charge-storing memory cells; and
circuitry configured to perform, in response to each of the erase commands, an erase operation with respect to the charge-storing memory cells and a thermal anneal operation with respect to the charge-storing memory cells, the charge-storing memory ells being heated to an annealing temperature range above 250 degrees Celsius in the thermal anneal operation.
5. The integrated-circuit memory device of claim 4 further comprising a word line coupled to the charge-storing memory cells, and wherein the circuitry configured to perform the thermal anneal operation with respect to the charge-storing memory cells comprises circuitry to enable electric current to flow through the word line to heat the charge-storing memory cells to the annealing temperature range.
6. The integrated-circuit memory device of claim 5 wherein the circuitry to enable the electric current to flow through the word line coupled to the charge-storing memory cells to heat the charge-storing memory cells to the annealing temperature range comprises circuitry to enable the electric current to flow for a time interval having a duration between a time shorter than a duration of the erase operation and a time the duration of the erase operation.
7. The integrated-circuit memory device of claim 3 wherein the control circuitry comprises circuitry, responsive to the erase command, to execute a first erase operation during the limited interval in which the annealing circuitry is to enable electric current flow through the word line to heat the charge-storing memory cells to the annealing temperature range above 250° C.
8. The integrated-circuit memory device of claim 4 wherein the circuitry configured to perform, in response to each of the erase commands, the erase operation and the thermal anneal operation comprises circuitry configured to perform the erase operation and thermal anneal operation concurrently.
9. A method of operation within an integrated-circuit memory device having a word line coupled to charge-storing memory cells, the method comprising:
detecting an event during operation of the integrated-circuit memory device; and
in response to detecting the event, enabling electric current to flow through the word line for a limited interval to heat the charge-storing memory cells to an annealing temperature range above 250° C., the limited interval having a duration between a time shorter than a duration of an erase operation within the integrated-circuit memory device and a time not substantially longer than the duration of the erase operation.
10. The method of claim 9 further comprising asserting a select signal on the word line to enable data to be read out of one or more of the charge-storing memory cells.
11. The method of claim 9 wherein detecting the event comprises receiving an erase command that instructs the integrated-circuit memory device to erase the contents of the charge-storing memory cells.
12. The method of claim 11 further comprising executing a first erase operation in response to receiving the erase command and concurrently with enabling electric current to flow through the word line for the limited interval to heat the charge-storing memory cells to the annealing temperature range above 250° C.