Metal liftoff tools and methods
In certain embodiments the metal liftoff tool comprises an immersion tank for receiving a wafer cassette with wafers therein, the immersion tank including an inner weir, a lifting and lowering mechanism capable of raising and lowering the wafer cassette while submerged in fluid in the immersion tank, low pressure high velocity primary spray jets for stripping the metal, the primary spray jets positioned at opposing sides of the immersion tank parallel to the wafer surfaces planes, and secondary spray jets for pressure equalization force, positioned at the bottom of the immersion tank. A wafer lift insert is positioned at the bottom of the immersion tank to receive and periodically lift the wafers within the cassette.
1. A method comprising:
performing metal liftoff from a wafer surface by the steps of
a. immersing a cassette of wafers in a working fluid in an immersion tank, the immersion tank having opposing first and second sidewalls and a bottom;
b. directing working fluid streams from primary fluid spray jets positioned along at least one sidewall of the immersion tank directly toward the surfaces of the wafers, such that the working fluid stream flows over surfaces of the wafers in the cassette while immersed in the working fluid;
c. simultaneously to directing working fluid streams from primary fluid spray jets, raising and lowering the cassette of wafers within the immersion tank through the primary fluid spray jets; and
d. directing working fluid streams from secondary fluid spray jets positioned at the bottom of the immersion tank such that working fluid streams flow directly in an upward direction relative to the bottom of the immersion tank.
2. The method of claim 1 further comprising intermittently lowering the cassette of wafers onto a submerged static lifting assembly to periodically lift the wafers off a lower portion of the cassette while working fluid streams are sprayed by the primary and/or secondary fluid spray jets.
3. The method of claim 1 wherein the primary and secondary fluid spray jets spray working fluid streams simultaneously from beneath the wafers and horizontally from only one side of the immersion tank or from the bottom of the immersion tank and horizontally from the other side of the wafers.
4. The method of claim 1 further comprising primary spray jets positioned at the first and second sidewalls of the immersion tank so as to spray working fluid streams across the wafer surfaces, and wherein the secondary spray jets and the first sidewall primary spray jets spray working fluid simultaneously for a predetermined period of time as the cassette of wafers is raised and lowered in the working fluid streams, and then wherein the secondary spray jets and the second sidewall primary spray jets spray working fluid simultaneously for a predetermined period of time as the cassette of wafers is raised and lowered in the working fluid streams.
5. The method of claim 1 wherein working fluid streams from the primary fluid spray jets are substantially parallel to a planar surface of the wafers.
6. The method of claim 1 wherein the working fluid is heated.
7. The method of claim 1 further comprising an inner weir in the immersion tank, and wherein the working fluid stream from the secondary spray jets force stripped metal pieces in the working fluid over the inner weir.
8. The method of claim 1 further comprising collecting the working fluid and stripped metal pieces in an outer weir, and then filtering the stripped metal pieces out of the working fluid and recirculating the working fluid to the immersion tank.
9. The method of claim 1 wherein the working fluid is periodically drained from the immersion tank while the wafers are in process.
10. A method comprising:
etching metal from a wafer surface by the steps of
a. immersing a cassette of wafers in a working fluid in an immersion tank, the immersion tank having opposing first and second sidewalls and a bottom;
b. directing working fluid streams from primary fluid spray jets positioned along at least one sidewall of the immersion tank directly toward the surfaces of the wafers, such that the working fluid stream flows over surfaces of the wafers in the cassette while immersed in the working fluid;
c. simultaneously to directing working fluid streams from primary fluid spray jets, raising and lowering the cassette of wafers within the immersion tank through the primary fluid spray jets;
d. directing working fluid streams from secondary fluid spray jets positioned at the bottom of the immersion tank such that working fluid streams flow in an upward direction relative to the bottom of the immersion tank; and
e. intermittently lowering the cassette of wafers onto a submerged static lifting assembly to periodically lift the wafers off a lower portion of the cassette while working fluid streams are sprayed by the primary and/or secondary fluid spray jets.
11. A method comprising:
removing layers from a wafer surface by
a. immersing a cassette of wafers in a working fluid in an immersion tank, the immersion tank having opposing first and second sidewalls and a bottom;
b. directing working fluid streams from primary fluid spray jets positioned along at least one sidewall of the immersion tank directly toward the surfaces of the wafers, such that the working fluid stream flows over surfaces of the wafers in the cassette while immersed in the working fluid;
c. simultaneously to directing working fluid streams from primary fluid spray jets, raising and lowering the cassette of wafers within the immersion tank through the primary fluid spray jets; and
d. directing working fluid streams from secondary fluid spray jets positioned at the bottom of the immersion tank such that working fluid streams flow in an upward direction relative to the bottom of the immersion tank while the working fluid streams are simultaneously flowing from the primary fluid spray jets.
12. The method of claim 11 wherein working fluid streams from the primary fluid spray jets are substantially parallel to a planar surface of the wafers.
13. The method of claim 11 wherein the working fluid is heated.
14. The method of claim 11 further comprising collecting the working fluid and stripped metal pieces in an outer weir, and then filtering the stripped layer pieces out of the working fluid and recirculating the working fluid to the immersion tank.
15. The method of claim 11 further comprising primary spray jets positioned at the first and second sidewalls of the immersion tank so as to spray working fluid streams across the wafer surfaces, and wherein the secondary spray jets and the first sidewall primary spray jets spray working fluid simultaneously for a predetermined period of time as the cassette of wafers is raised and lowered in the working fluid streams, and then wherein the secondary spray jets and the second sidewall primary spray jets spray working fluid simultaneously for a predetermined period of time as the cassette of wafers is raised and lowered in the working fluid streams.
16. The method of claim 11 wherein the secondary fluid spray jets positioned at the bottom of the immersion tank are configured to direct working fluid streams flow in a direction perpendicular relative to planes defined by surfaces of the immersion tank sidewalls.
17. The method of claim 11 further comprising intermittently lowering the cassette of wafers onto a submerged static lifting assembly to periodically lift the wafers off a lower portion of the cassette while working fluid streams are sprayed by the primary and/or secondary fluid spray jets.
18. The method of claim 11 further comprising intermittently lowering the cassette of wafers onto a submerged static lifting assembly to periodically lift the wafers off a lower portion of the cassette while working fluid streams are sprayed by the primary and/or secondary fluid spray jets.