Method and system for providing directional light sources with broad spectrum
View Patent ↗A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.
1. An optical device comprising:
a gallium and nitrogen containing substrate comprising a first crystalline surface region orientation, the first crystalline surface region orientation being non-polar or semi-polar;
a current source;
a first active region comprising a barrier layer and a first emission layer, the first emission layer being characterized by a first gain peak wavelength and a first resistance, the first active region being electrically coupled to the current source, the first gain peak wavelength being based on a first amount of current received from the current source;
a second active region comprising a second emission layer, the second emission layer being characterized by a second gain peak wavelength and a second resistance, the second active region being electrically coupled to the current source, the second peak wavelength being based on a second amount of current received from the current source, a ratio between the first amount of current and the second amount of current being a function of a ratio between the first resistance and the second resistance, and wherein a difference between the first gain peak wavelength and the second gain peak wavelength is at least 1.5 nm;
a first cavity member overlying the first emission layer, the first cavity member being configured to emit radiation at a wavelength of about 430 nm to 480 nm or at a wavelength of about 505 nm to 540 nm;
a second cavity member overlying the second the emission layer; and
an optical member for combining emission from the first cavity member and from the second cavity member.
2. The device of claim 1 wherein the first resistance is associated with a size of the first cavity member.
3. The device of claim 1 wherein the difference between the first gain peak wavelength and the second gain peak wavelength is at about 5 nm.
4. The device of claim 1 , wherein the active region comprises at least one quantum well and at least one barrier layer, each of the at least one quantum wells having a thickness of at least 1.5 nm, and each of the at least one barrier layers having a thickness between about 2 nm and about 22 nm.
5. The device of claim 1 , wherein the first cavity member and the second cavity member each comprise a first end having an reflectivity of at least 85% and a second end having a reflectivity of 1% or less.
6. The device of claim 1 , wherein the first cavity member and the second cavity member are configured to emit a directional beam of light having a spectral width of at least 3 nm.
7. The device of claim 6 , wherein the spectral width is adapted to reduce speckle associated with the directional beam.
8. The device of claim 1 , wherein the first cavity member and the second cavity member are configured to emit a directional beam of light having a spectral width of 4 nm to 8 nm.
9. The device of claim 1 , wherein the first crystalline surface region orientation comprises a semipolar plane selected from the {20-21} plane, the {30-31} plane, the {20-2-1} plane, the {30-3-1} plane, the {11-22} plane, and an off-cut of any of the foregoing.
10. The device of claim 1 , wherein the difference between the first gain peak wavelength and the second gain peak wavelength is at least 10 nm.
11. The device of claim 1 , wherein the first cavity member and the second cavity member are configured to emit a directional beam of light having a spectral width greater than 1.5 nm.
12. The device of claim 1 , wherein the first crystalline surface region orientation is selected from a {20-21} plane, a {20-2-1} plane, and an off-cut thereof; and the first cavity member and the second cavity member are oriented in a projection of a c-direction.
13. The device of claim 1 , wherein the first crystalline surface region orientation is selected from a {30-31} plane, a {20-21} plane, and an off-cut thereof.
14. The device of claim 1 , wherein a difference between the first wavelength and the second wavelength is from 1 nm to 10 nm.