IP Library Granted Patent US 9,425,362
Granted Patent B2
US 9,425,362 · App. 14/098,643 · Granted Aug 23, 2016

Light emitting device

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Quick Facts
Patent No.
US 9,425,362
App. No.
14/098,643
Granted
Aug 23, 2016
Kind
B2
Abstract

A light-emitting device is disclosed, comprising a substrate; a light-emitting structure on the substrate comprising a first region and a second region; a barrier layer on the first region having a bottom surface and a sidewall, wherein an angle between the sidewall and the bottom surface is between 10°70°; and a transparent conductive layer formed on the light-emitting structure and the barrier layer; wherein a difference between a thickness of the transparent conductive layer at the sidewall on the barrier layer and a thickness of the transparent conductive layer on the second region of the light-emitting structure forms a ratio not larger than 10 %.

Claims (29)

1. A light-emitting device, comprising:

a substrate;

a light-emitting structure on the substrate comprising a first region and a second region;

a barrier layer on the first region having a bottom surface and a sidewall; and

a transparent conductive layer formed on the light-emitting structure and the barrier layer;

wherein an angle between the sidewall and the bottom surface is between 10°-70°;

wherein the transparent conductive layer is formed between the sidewall of the barrier layer and the second region of the light-emitting structure, wherein a difference between a thickness of the transparent conductive layer at the sidewall on the barrier layer and a thickness of the transparent conductive layer on the second region of the light-emitting structure forms a ratio not larger than 10%.

2. The device of claim 1 , wherein a thickness of the barrier layer is larger than 3000 angstroms and less than 9700 angstroms.

3. The device of claim 1 , further comprising a first electrode formed on the transparent conductive layer at a position corresponding to the barrier layer, wherein the first electrode has a shape substantially the same as the barrier layer.

4. The device of claim 3 , wherein the first electrode comprises a first electrode pad and an extended electrode; the light-emitting device further comprises a second electrode which comprises a second electrode pad; and wherein the extended electrode extends from the first electrode pad to the second electrode pad.

5. The device of claim 1 , further comprising

an electrode formed on the transparent conductive layer wherein the electrode comprises an electrode pad and an extended electrode, the light-emitting structure comprises four sides, and the barrier layer comprises an electrode region on a position corresponding to the electrode and an extension region extending to the four sides from the electrode region.

6. The device of claim 1 , wherein the barrier layer comprises an insulation material having a resistance larger than 10 14 Ω-cm.

7. The device of claim 1 , wherein the substrate comprises an inclined sidewall.

8. The device of claim 7 , wherein the inclined sidewall comprises a rough surface.

9. A light-emitting device, comprising:

a substrate;

a light-emitting structure on the substrate comprising a first region and a second region;

a barrier layer on the first region having a bottom surface and a sidewall, wherein an angle between the sidewall and the bottom surface is between 10°-70°; and

a transparent conductive layer formed on the light-emitting structure and the barrier layer;

wherein a difference between a thickness of the transparent conductive layer at the sidewall on the barrier layer and a thickness of the transparent conductive layer on the second region of the light-emitting structure forms a ratio not larger than 10%.

10. The device of claim 9 , wherein a thickness of the barrier layer is larger than 3000 angstroms and less than 9700 angstroms.

11. The device of claim 9 , further comprising a first electrode formed on the transparent conductive layer at a position corresponding to the barrier layer, wherein the first electrode has a shape substantially the same as the barrier layer.

12. The device of claim 11 , wherein the first electrode comprises a first electrode pad and an extended electrode; the light-emitting device further comprises a second electrode which comprises a second electrode pad; and wherein the extended electrode extends from the first electrode pad to the second electrode pad.

13. The device of claim 9 , further comprising

an electrode formed on the transparent conductive layer wherein the electrode comprises an electrode pad and an extended electrode, the light-emitting structure comprises four sides, and the barrier layer comprises an electrode region on a position corresponding to the electrode and an extension region extending to the four sides from the electrode region.

14. The device of claim 9 , wherein the barrier layer comprises an insulation material having a resistance larger than 10 14 Ω-cm.

15. The device of claim 9 , wherein the substrate comprises an inclined sidewall.

16. The device of claim 15 , wherein the inclined sidewall comprises a rough surface.

Assignments (2)
CHANGE OF NAME Recorded Feb 26, 2026
From: EPISTAR CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075152/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 16, 2014
From: WU, JAR-YU; SU, CHING-JANG; TSENG, CHUN-LUNG; SHEN, CHING-HSING
To: EPISTAR CORPORATION
Reel/Frame 031982/0601 →