IP Library Granted Patent US 9,076,946
Granted Patent B2
US 9,076,946 · App. 14/098,911 · Granted Jul 7, 2015

Light-emitting element

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Quick Facts
Patent No.
US 9,076,946
App. No.
14/098,911
Granted
Jul 7, 2015
Kind
B2
Abstract

A light-emitting element comprises: a light-emitting semiconductor stack comprising a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a first protection layer on the light-emitting semiconductor stack and comprising a first through hole; and a conductive contact layer on the first protection layer and electrically connected to the first electrode through the first through hole.

Claims (36)

1. A light-emitting element, comprising:

a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer;

a first electrode on the first semiconductor layer;

a first protection layer on the light-emitting semiconductor stack and comprising a first through hole; and

a conductive contact layer on the first protection layer and electrically connected to the first electrode through the first through hole;

wherein the conductive contact layer further comprises a first conductive part and a second conductive part spatially separated from the first conductive part, and a distance between the first conductive part and the second conductive part is at least 50 μm.

2. The light-emitting element according to claim 1 , wherein the distance ranges from 70 μm to 150 μm.

3. The light-emitting element according to claim 1 , wherein a surface area of an upper surface of the first conductive part is different from a surface area of an upper surface of the second conductive part.

4. The light-emitting element according to claim 3 , wherein the surface area of the upper surface of the first conductive part is smaller than the surface area of the upper surface of the second conductive part, and a height of the first conductive part is larger than a height of the second conductive part.

5. The light-emitting element according to claim 1 , wherein a surface area of an upper surface of the first conductive part is equal to a surface area of an upper surface of the second conductive part.

6. The light-emitting element according to claim 5 , wherein a height of the first conductive part is equal to a height of the second conductive part.

7. A light-emitting element, comprising:

a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer;

a first electrode on the first semiconductor layer;

a first protection layer on the light-emitting semiconductor stack and comprising a first through hole;

a conductive contact layer on the first protection layer and electrically connected to the first electrode through the first through hole, wherein the conductive contact layer comprises a first conductive part and a second conductive part spatially separated from the first conductive part; and

a second electrode between the light-emitting semiconductor stack and the first protection layer;

wherein the first protection layer further comprises a second through hole at a position above the second electrode, and the second conductive part is electrically connected to the second electrode through the second through hole.

8. The light-emitting element according to claim 7 , further comprising a height balancer between the second conductive part and the first protection layer, wherein the height balancer is connected to the second electrode through the second through hole.

9. The light-emitting element according to claim 1 , wherein the first electrode comprises a contact area and the first conductive part is electrically connected to the contact area through the first through hole.

10. The light-emitting element according to claim 1 , wherein the first conductive part comprises a first height and the second conductive part comprises a second height substantially equal to the first height.

11. A light-emitting element, comprising:

a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer; and a light-emitting layer between the first semiconductor layer and the second semiconductor layer;

a first electrode on the first semiconductor layer;

a first protection layer on the light-emitting semiconductor stack and comprising a first through hole;

a conductive contact layer on the first protection layer and electrically connected to the first electrode through the first through hole, wherein the conductive contact layer comprises a first conductive part and a second conductive part spatially separated from the first conductive part; and

a height balancer between the first conductive part and the first protection layer, wherein the height balancer is connected to the first electrode through the first through hole.

12. The light-emitting element according to claim 1 , wherein a ratio of a surface area of an upper surface of the first conductive part to a surface area of an upper surface of the second conductive part ranges from 0.8 to 1.2.

13. The light-emitting element according to claim 1 , wherein the first conductive part comprises a first width and the second conductive part comprises a second width, wherein a ratio of the first width to the second width ranges from 0.8 to 1.2.

14. The light-emitting element according to claim 1 , further comprising a second protection layer between the light-emitting semiconductor stack and the first protection layer, wherein the first protection layer covers and surrounds the second protection layer.

15. The light-emitting element according to claim 14 , further comprising a reflective layer on the second protection layer.

16. The light-emitting element according to claim 15 , further comprising a barrier layer on the reflective layer and covering and surrounding the reflective layer.

17. The light-emitting element according to claim 14 , wherein the first electrode comprises a contact area and an extension area extending outwardly from the contact area, and the extension area is between the light-emitting semiconductor stack and the first protection layer.

18. The light-emitting element according to claim 1 , wherein the light-emitting semiconductor stack, the first electrode, the first protection layer or the conductive contact layer comprises an upper face, a lower face opposite to the upper face, a side face between the upper face and the lower face, and an angle between the side face and the lower face, wherein the angle ranges from 15 degrees to 70 degrees.

19. The light-emitting element according to claim 7 , wherein a distance between the first conductive part and the second conductive part is at least 50 μm.

20. The light-emitting element according to claim 11 , wherein a distance between the first conductive part and the second conductive part is at least 50 μm.

Assignments (2)
CHANGE OF NAME Recorded Apr 22, 2026
From: EPISTAR CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075513/0783 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 6, 2013
From: HON, SCHANG-JING; CHEN, CHAO-HSING; KO, TSUN-KAI; SHEN, CHIEN-FU; WANG, JIA-KUEN; CHEN, HUNG-CHE
To: EPISTAR CORPORATION
Reel/Frame 031734/0189 →