Semiconductor device
View Patent ↗A semiconductor device includes a metal substrate, semiconductor elements, wires, a control terminal, a main electrode terminal, a control substrate, a cover, a sealing resin, a case, and an insulator. The metal substrate includes a metal plate, an insulating layer formed on the top surface of the metal plate, and electrode patterns provided on the insulating layer. The semiconductor elements are secured to different ones of the electrode patterns by solder. The sealing resin seals the components within the case, such as the semiconductor elements. The insulator covers a portion of the surface of the insulating layer and at least a portion of the edge of each electrode pattern.
1. A semiconductor device comprising:
a metal substrate including a metal plate, an insulating layer formed on a top surface of the metal plate, and a conductive material pattern provided on the insulating layer;
a semiconductor element provided on the conductive material pattern;
a sealing resin sealing the semiconductor element; and
an insulator covering a portion of a surface of the insulating layer and at least a portion of an edge of the conductive material pattern.
2. The semiconductor device according to claim 1 , wherein:
a lower side of the edge of the conductive material pattern projects toward the insulator; and
the insulator covers at least the lower side of the edge of the conductive material pattern.
3. The semiconductor device according to claim 1 , wherein the edge of the conductive material pattern has a recess, and the insulator covers an interior surface of the recess.
4. The semiconductor device according to claim 1 , wherein the insulator is made of a material having a coefficient of linear expansion equal to that of the insulating layer.
5. The semiconductor device according to claim 1 , wherein a top surface of the conductive material pattern is level with a top surface of the insulator.
6. The semiconductor device according to claim 1 , wherein the insulator extends onto the conductive material pattern, and a portion of the insulator is located on the conductive material pattern.
7. The semiconductor device according to claim 6 , wherein the semiconductor element is positioned by an edge of the portion of the insulator located on the conductive material pattern.
8. The semiconductor device according to claim 6 , wherein:
the conductive material pattern has a hole below the portion of the insulator located on the conductive material pattern; and
the insulator continuously covers the edge of the conductive material pattern and an interior surface of the hole of the conductive material pattern.
9. The semiconductor device according to claim 1 , further comprising projections and recesses formed between the insulating layer and the conductive material pattern.
10. The semiconductor device according to claim 1 , wherein the insulator continuously covers at least the top surface and a side of the metal plate.
11. The semiconductor device according to claim 1 , wherein the top surface of the metal plate is provided with recesses, and the recesses are filled with a portion of the insulator.
12. The semiconductor device according to claim 11 , wherein the recesses are formed by imparting a satin finish to the top surface of the metal plate.
13. The semiconductor device according to claim 1 , further comprising an insulating screw which penetrates through the conductive material pattern and the insulating layer and which is screwed into the metal plate.