Hybrid multi-junction photovoltaic cells and associated methods
View Patent ↗A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB 2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.
1. A method of making a p-type Cadmium Selenide semiconductor material, comprising:
depositing a layer of Cadmium Selenide;
coating the layer of Cadmium Selenide with a solution comprising a solvent and at least one of chloride selected from the group consisting of chlorides of Group IA elements, chlorides of group IB elements, and chlorides of Group IIIB elements; and
heating the layer of Cadmium Selenide in an environment having an ambient temperature of between 300 and 500 degrees Celsius for a time between three and thirty minutes while at least partially preventing the evaporation of Selenium from the layer of Cadmium Selenide.
2. The method of claim 1 , wherein Selenium is at least partially prevented from evaporating from the layer of Cadmium Selenide during the step of heating by executing the step of heating in a Selenium enriched atmosphere.
3. The method of claim 1 , wherein Selenium is at least partially prevented from evaporating from the layer of Cadmium Selenide during the step of heating by physically impeding the evaporation of Selenium from the layer of Cadmium Selenide.
4. The method of claim 1 , wherein the solution comprises Copper Chloride and a solvent.
5. The method of claim 1 , wherein the solution comprises Gallium Chloride and a solvent.
6. The method of claim 1 , wherein the solution comprises Copper Chloride, Gallium Chloride, and a solvent.
7. The method of claim 1 , wherein the solution further comprises Cadmium Chloride.
8. A method of making a photovoltaic device, comprising:
depositing a contact layer;
depositing a layer of Cadmium Selenide;
coating the layer of Cadmium Selenide with a solution comprising a solvent and at least one of chloride selected from the group consisting of chlorides of Group IA elements, chlorides of group IB elements, and chlorides of Group IIIB elements;
heating the layer of Cadmium Selenide in an environment having an ambient temperature of between 300 and 500 degrees Celsius for a time between three and thirty minutes while at least partially preventing the evaporation of Selenium from the layer of Cadmium Selenide;
depositing a heterojunction partner layer; and
depositing a transparent conductor layer.
9. The method of claim 8 , wherein Selenium is at least partially prevented from evaporating from the layer of Cadmium Selenide during the step of heating by executing the step of heating in a Selenium enriched atmosphere.
10. The method of claim 8 , wherein Selenium is at least partially prevented from evaporating from the layer of Cadmium Selenide during the step of heating by physically impeding the evaporation of Selenium from the layer of Cadmium Selenide.
11. The method of claim 8 , wherein the solution comprises Copper Chloride and a solvent.
12. The method of claim 8 , wherein the solution comprises Gallium Chloride and a solvent.
13. The method of claim 8 , wherein the solution comprises Copper Chloride, Gallium Chloride, and a solvent.
14. The method of claim 8 , wherein the solution further comprises Cadmium Chloride.
15. The method of claim 8 , wherein the heterojunction partner layer is a material selected from the group consisting of Zinc Selenide, Cadmium Sulfide, Cadmium Zinc Selenide, Cadmium Selenide, Zinc Sulfide, Cadmium Oxide, Zinc Oxide, Zinc Magnesium Oxide, Tin Oxide, and Cadmium Zinc Sulfide.
16. The method of claim 8 , further comprising depositing an undoped buffer layer between the heterojunction partner layer and the transparent conductor layer.
17. The method of claim 8 , wherein the contact layer is a bilayer.
18. The method of claim 17 , wherein the contact layer comprises a layer of doped ZnTe and a layer of a material selected from the group consisting of a metal, and a transparent conducting oxide.