IP Library Granted Patent US 8,981,508
Granted Patent B2
US 8,981,508 · App. 14/101,887 · Granted Mar 17, 2015

Magnetic field sensor

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Quick Facts
Patent No.
US 8,981,508
App. No.
14/101,887
Granted
Mar 17, 2015
Kind
B2
Abstract

A magnetic field sensor having a support with a top side and a bottom side, whereby a Hall plate is provided on the top side of the support and the Hall plate comprises a carbon-containing layer.

Claims (25)

1. A magnetic field sensor comprising:

a support with a top side and a bottom side, the support being formed as a silicon substrate;

a Hall plate arranged on the top side of the support; and

a control unit monolithically integrated in the silicon substrate,

wherein the Hall plate comprises a carbon-containing layer,

wherein the Hall plate is formed above a passivation layer of the silicon substrate,

wherein the Hall plate is electrically connected to the control unit, and

wherein the control unit and the Hall plate are disposed in a same housing.

2. The magnetic field sensor according to claim 1 , wherein the carbon-containing layer is formed as a Hall plate.

3. The magnetic field sensor according to claim 1 , wherein the carbon-containing layer is formed as a two-dimensional layer so that a current flow occurs substantially only parallel to a layer plane.

4. The magnetic field sensor according to claim 1 , wherein two Hall plates or three Hall plates are provided on the support.

5. The magnetic field sensor according to claim 4 , wherein the Hall plates are arranged orthogonal to one another.

6. A magnetic field sensor comprising:

a support with a top side and a bottom side, and comprising a passivation layer;

a Hall plate arranged above the top side of the support above the passivation layer, the Hall plate comprising a carbon-containing layer; and

a control unit, electrically connected to the Hall plate, arranged above the top side of the support.

7. The magnetic field sensor according to claim 6 , wherein the support comprises a silicon substrate.

8. The magnetic field sensor according to claim 7 , wherein the control unit is monolithically integrated with the silicon substrate.

9. The magnetic field sensor according to claim 6 , wherein the Hall plate is formed solely of the carbon-containing layer.

10. The magnetic field sensor according to claim 6 , wherein a ratio of a lateral dimension of the Hall plate to a thickness of the Hall plate is greater than 50.

11. The magnetic field sensor according to claim 6 , wherein the carbon-containing layer is formed as a two-dimensional layer so that a current flow occurs substantially only parallel to a layer plane.

12. The magnetic field sensor according to claim 6 , wherein two Hall plates or three Hall plates are provided on the support.

13. The magnetic field sensor according to claim 12 , wherein the Hall plates are arranged orthogonal to one another.

14. The magnetic field sensor according to claim 6 , further comprising a housing,

wherein the Hall plate and the control unit are disposed within the housing.

Assignments (2)
CHANGE OF NAME Recorded Mar 7, 2017
From: MICRONAS GMBH
To: TDK-MICRONAS GMBH
Reel/Frame 041901/0191 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 28, 2014
From: FRANKE, JOERG
To: MICRONAS GMBH
Reel/Frame 032063/0914 →