Distributed MEMS devices time synchronization methods and system
A method for fabricating a multiple MEMS device. A semiconductor substrate having a first and second MEMS device, and an encapsulation wafer with a first cavity and a second cavity, which includes at least one channel, can be provided. The first MEMS can be encapsulated within the first cavity and the second MEMS device can be encapsulated within the second cavity. These devices can be encapsulated within a provided first encapsulation environment at a first air pressure, encapsulating the first MEMS device within the first cavity at the first air pressure. The second MEMS device within the second cavity can then be subjected to a provided second encapsulating environment at a second air pressure via the channel of the second cavity.
1. A method for fabricating a multiple MEMS device comprising:
providing a semiconductor substrate having a first MEMS device and a second MEMS device;
providing an encapsulation wafer comprising a first cavity, a second cavity, and a vent cavity, wherein the second cavity comprises at least one channel coupled to the vent cavity;
providing a first encapsulation environment at a first air pressure;
encapsulating the first MEMS device within the first cavity and the second MEMS device within the second cavity, while within the first encapsulation environment, to encapsulate the first MEMS device within the first cavity at the first air pressure;
providing a second encapsulating environment at a second air pressure, wherein the second air pressure is different from the first air pressure;
subjecting the second MEMS device within the second cavity to the second encapsulation environment via the at least one channel, wherein subjecting the second MEMS device to the second encapsulation environment includes removing a portion of the encapsulation wafer by an etching process or grinding process in order to open the vent cavity and subject the second cavity to the second encapsulation environment through the at least one channel; and
sealing the at least one channel, while within the second encapsulation environment, to encapsulate the second MEMS device within the second cavity at the second air pressure.
2. The method of claim 1 wherein the first MEMS device is selected from a group consisting of: a magnetometer, a gyroscope, an oscillator, a filter, and infrared sensor.
3. The method of claim 2 wherein the first air pressure is below atmospheric air pressure.
4. The method of claim 1 wherein the first MEMS device an accelerometer.
5. The method of claim 4 wherein the first air pressure is above atmospheric air pressure.
6. The method of claim 1 wherein the first air pressure is below the second air pressure.
7. The method of claim 1 wherein the first encapsulation environment comprises a gas selected from a group consisting of: helium, xenon, krypton, argon.
8. The method of claim 1 wherein sealing the at least one channel comprises depositing a layer of material using a process selected from a group consisting of: CVD, PVD, sputtering, and evaporation.
9. The method of claim 1 further comprising:
providing an initial encapsulation wafer;
patterning a masking layer on top of the initial encapsulation wafer, wherein the masking layer comprises a first opening, a second opening, and a third opening, wherein a width of the third opening is substantially smaller than a width of the first opening or a width of the second opening;
etching the initial encapsulation wafer to form the encapsulation layer, wherein the first cavity is associated with the first opening, the second cavity is associated with the second opening, and the third opening is associated with the at least one channel.
10. The method of claim 9 wherein the depth of the at least one channel is less than a depth of the first cavity and less than a depth of the second cavity.
11. A method of fabricating a multiple MEMS device comprising;
providing a semiconductor substrate having a first MEMS device and a second MEMS device;
providing an initial encapsulation wafer;
patterning a masking layer on top of the initial encapsulation wafer, wherein the masking layer comprises a first opening, a second opening, a third opening, and a fourth opening, wherein a width of the third opening is substantially smaller than a width of the first opening or a width of the second opening or a width of the fourth opening;
etching the initial encapsulation wafer to form an encapsulation layer, wherein a first cavity is associated with the first opening, a second cavity is associated with the second opening, the third opening is associated with at least one channel, and the fourth opening is associated with a vent cavity;
providing a first encapsulation environment at a first air pressure;
encapsulating the first MEMS device within the first cavity and the second MEMS device within the second cavity, while within the first encapsulation environment, to encapsulate the first MEMS device within the first cavity at the first air pressure;
providing a second encapsulating environment at a second air pressure, wherein the second air pressure is different from the first air pressure;
subjecting the second MEMS device within the second cavity to the second encapsulation environment via the at least one channel, wherein subjecting the second MEMS device to the second encapsulation environment includes removing a portion of the encapsulation wafer by an etching process or grinding process in order to open the vent cavity and subject the second cavity to the second encapsulation environment through the at least one channel; and
sealing the at least one channel, while within the second encapsulation environment, to encapsulate the second MEMS device within the second cavity at the second air pressure.
12. The method of claim 11 further comprising opening one or more bond pads.
13. The method of claim 11 wherein the first air pressure is below atmospheric air pressure and wherein the first MEMS device is selected from a group consisting of: a magnetometer, a gyroscope, an oscillator, a filter, an infrared sensor.
14. The method of claim 11 wherein the first air pressure is above atmospheric pressure and wherein the first MEMS is an accelerometer.
15. The method of claim 11 wherein the depth of the at least one channel is less than a depth of the first cavity and less than a depth of the second cavity.
16. The method of claim 11
wherein semiconductor substrate includes a device layer and an interconnect layer;
wherein the device layer includes the first and second MEMS devices and the device layer is configured overlying the interconnect layer; and
wherein the encapsulation layer is bonded to the interconnect layer.
17. The method of claim 11
wherein semiconductor substrate includes a device layer and an interconnect layer;
wherein the device layer includes the first and second MEMS devices and the device layer is configured overlying the interconnect layer; and
wherein the encapsulation layer is bonded to the device layer.