Silicon depletion modulators with enhanced slab doping
View Patent ↗Disclosed herein are methods, structures, and devices for a silicon carrier-depletion based modulator with enhanced doping in at least part of slab regions between waveguide core and contact areas. Compared to prior designs, this modulator exhibits lower optical absorption loss and better modulation bandwidth without sacrificing the modulation efficiency when operating at comparable bandwidth settings.
1. A silicon carrier-depletion modulator, comprising:
a waveguide comprising a slab and a core, the core having a first height and including a first core region doped a first conductivity type and a second core region doped a second conductivity type, the first conductivity type being opposite the second conductivity type,
wherein the slab has a second height, different from the first height, and comprises a first slab region doped the first conductivity type, a second slab region doped the first conductivity type, and a third slab region, and
wherein the second and third slab regions are between the first slab region and the first core region, the third slab region is between the second slab region and the first core region, and wherein a first doping level of the first slab region is greater than a second doping level of the second slab region, and the second doping level of the second slab region is greater than a third doping level of the third slab region and a core doping level of the first core region.
2. The silicon carrier-depletion modulator of claim 1 , wherein the first core region is disposed between the third slab region and the second core region.
3. The silicon carrier-depletion modulator of claim 1 , wherein the first slab region is a first contact electrode region, wherein the silicon carrier-depletion modulator comprises a second contact electrode region in the slab, and wherein the core is configured to exhibit an altered refractive index and absorption coefficient in response to application of an electrical voltage to the first and second contact electrode regions.
4. The silicon carrier-depletion modulator of claim 1 , wherein the first core region has a doping level of between 2×10 17 dopants per cm 3 and 10×10 17 dopants per cm 3 , the second slab region has a doping level of between 1×10 18 dopants per cm 3 and 5×10 18 dopants per cm 3 , and the first slab region has a doping level of substantially 2×10 20 dopants per cm 3 .
5. The silicon carrier-depletion modulator of claim 1 , wherein the third doping level of the third slab region and the core doping level of the first core region are the same.
6. The silicon carrier-depletion modulator of claim 1 , wherein the slab further comprises a fourth slab region doped the second conductivity type, a fifth slab region doped the second conductivity type, and a sixth slab region, wherein the fifth and sixth slab regions are between fourth slab region and the second core region, the sixth slab region is between the fifth slab region and the second core region, and wherein a fourth doping level of the fourth slab region is greater than a fifth doping level of the fifth slab region, and the fifth doping level of the fifth slab region is greater than a sixth doping level of the sixth slab region and a doping level of the second core region.
7. The silicon carrier-depletion modulator of claim 1 , wherein the first conductivity type is p-type.
8. The silicon carrier-depletion modulator of claim 1 , wherein the first core region and the second core region are separated by a depletion region.
9. The silicon carrier-depletion modulator of claim 1 , wherein the core comprises a rib of the waveguide, and wherein the first core region and the second core region each extend substantially through a thickness of the core.