Extremely low resistance films and methods for modifying and creating same
Operational characteristics of an extremely low resistance (“ELR”) film comprised of an ELR material may be improved by depositing a modifying material onto appropriate surfaces of the ELR film to create a modified ELR film. In some implementations of the invention, the ELR film may be in the form of a “c-film.” In some implementations of the invention, the ELR film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified ELR film has improved operational characteristics over the ELR film alone or without the modifying material. Such operational characteristics may include operating in an ELR state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the ELR material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.
1. An ELR film comprising:
a first layer comprised of an ELR material having a face and a crystalline structure, wherein the face is parallel to an a-axis of the crystalline structure; and
a second layer comprised of a modifying material bonded to the face of the ELR material of the first layer,
wherein the ELR material bonded to the modifying material has an improved operational characteristic over the operational characteristics of the ELR material without the modifying material.
2. The ELR film of claim 1 , wherein the improved operational characteristic comprises a higher transition temperature.
3. The ELR film of claim 1 , further comprising a third layer comprised of a substrate material.
4. The ELR film of claim 3 , wherein the first layer is adjacent the substrate layer.
5. The ELR film of claim 3 , wherein the second layer is adjacent the substrate layer.
6. The ELR film of claim 1 , further comprising a buffer or an insulating layer.
7. The ELR film of claim 6 , wherein the first layer is adjacent the buffer or the insulating layer.
8. The ELR film of claim 6 , wherein the second layer is adjacent the buffer or the insulating layer.
9. The ELR film of claim 1 , further comprising a third layer of ELR material bonded to the second layer.
10. The ELR film of claim 1 , further comprising a third layer of modifying material bonded to the first layer.
11. The ELR film of claim 3 , wherein the substrate material comprises a polycrystalline material, a polycrystalline metal, an alloy, a Hastelloy metal, a Haynes metal, or an Inconel metal.
12. The ELR film of claim 1 , wherein the modifying material comprises chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, selenium, or other material.
13. The ELR film of claim 1 , wherein the ELR material comprises a superconducting material.
14. The ELR film of claim 13 , wherein the superconducting material comprises a mixed-valence copper-oxide perovskite.
15. The ELR film of claim 13 , wherein the superconducting material comprises an iron pnictide material.