IP Library › Patent Application 14109420
Patent Application
App. No. 14/109,420

VERTICAL NITRIDE-BASED LIGHT EMITTING DIODE HAVING OHMIC CONTACT PATTERN AND METHOD OF MANUFACTURING THE SAME

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Quick Facts
Patent No.
US None
App. No.
14/109,420
Abstract

Provided is a vertical nitride-based LED including a first electrode; a first nitride semiconductor layer that is disposed on the first electrode; an active layer that is disposed on the first nitride semiconductor layer; a second nitride semiconductor layer that is disposed on the active layer; an ohmic contact pattern that is disposed on the second nitride semiconductor layer; a second electrode that is disposed on the ohmic contact pattern; and a bonding pad that is electrically connected to the second electrode and disposed on the second nitride semiconductor layer.

Claims (16)

1 .- 12 . (canceled)

13 . A method of manufacturing a nitride-based LED, comprising:

sequentially forming a second nitride semiconductor layer, an active layer, and a first nitride semiconductor layer on a substrate;

forming a first electrode on the first nitride semiconductor layer;

exposing the second nitride semiconductor layer by removing the substrate;

forming an ohmic contact pattern on the second nitride semiconductor layer; and

forming a second electrode disposed on the ohmic contact pattern and a bonding pad which is electrically connected to the second electrode so as to be disposed on the second nitride semiconductor layer.

14 . The method according to claim 13 , wherein the ohmic contact pattern is formed by performing a surface treatment on the second nitride semiconductor layer.

15 . The method according to claim 14 , wherein the surface treatment includes:

providing a mask on the second nitride semiconductor layer, the mask having an opening corresponding to the second electrode; and

irradiating laser onto the second nitride semiconductor layer including the mask.

16 . The method according to claim 14 , wherein the surface treatment includes selectively irradiating laser on the second nitride semiconductor layer.

17 . The method according to claim 13 further comprising:

performing a cleaning process after the forming of the ohmic contact pattern.

18 . The method according to claim 13 further comprising:

performing an annealing process after the forming of the ohmic contact pattern.