Semiconductor device and a method of manufacturing the same
A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The opening lies over the pad and exposes a surface of the pad. A bump electrode is formed over the surface protective film including the opening. Here, the pad is smaller than the bump electrode. Consequently, the wires are arranged just beneath the bump electrode in the same layer as the pad 10 . In other words, the wires are arranged in space which becomes available because the pad is small enough.
1. A semiconductor device comprising:
(a) a semiconductor substrate of substantially rectangular shape having a pair of long edges and a pair of short edges;
(b) a plurality of semiconductor elements formed over the semiconductor substrate;
(c) a first insulating film formed over the semiconductor substrate to cover the semiconductor elements;
(d) a plurality of pad electrodes formed over the first insulating film and formed of a conductive layer;
(e) a first wiring formed over the first insulating film and formed at a same level conductive layer as that of the conductive layer of the pad electrodes;
(f) a second insulating film formed over the pad electrodes and the first wiring, the second insulating film having openings at upper sides of corresponding ones of the pad electrodes; and
(g) a plurality of bump electrodes of substantially rectangular shape formed over the second insulating film and being electrically connected to the pad electrodes via the openings of the second insulating film respectively,
wherein the bump electrodes and the pad electrodes are respectively arranged at predetermined intervals in a first direction along one of the long edges of the semiconductor substrate,
wherein each of the bump electrodes has a pair of short edges and a pair of long edges, the pair of long edges extending in a second direction along one of the pair of short edges of the semiconductor substrate,
wherein the bump electrodes are stacked on the pad electrodes respectively such that one of the pair of short edges of the bump electrodes is positioned inside a peripheral edge of the respective pad electrode in a plan view, and
wherein the first wiring is disposed to intersect with the long edges of the bump electrodes in a plan view and is disposed under the bump electrodes.
2. A semiconductor device according to claim 1 ,
wherein a width of each of the bump electrodes in the first direction is smaller than a width of each of the pad electrodes in the first direction, and
wherein a width of each of bump electrodes in the second direction is larger than a width of each of the pad electrodes in the second direction.
3. A semiconductor device according to claim 1 ,
wherein the other of the pair of the short edges of the bump electrodes is positioned between both sides of the first wiring in a plan view and is stacked on the first wiring.
4. A semiconductor device according to claim 1 ,
wherein the bump electrodes are formed of a gold film.
5. A semiconductor device according to claim 1 ,
wherein the first wiring includes a power supply wire.
6. A semiconductor device according to claim 1 ,
wherein the first wiring is formed in a top wiring layer.
7. A semiconductor device according to claim 1 ,
wherein the semiconductor elements include a portion of circuits which drive a liquid crystal display.