Diode, semiconductor device, and MOSFET
Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode electrode, a cathode region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor, an anode region made of a second conductivity type semiconductor, an anode electrode made of metal, a barrier region formed between the drift region and the anode region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region, and a pillar region formed so as to connect the barrier region to the anode electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region. The pillar region and the anode are connected through a Schottky junction.
1. A diode comprising:
a cathode electrode;
a cathode region made of first conductivity type semiconductor;
a drift region made of first conductivity type semiconductor having a concentration lower than that of the cathode region;
an anode region made of second conductivity type semiconductor;
an anode electrode made of metal;
a barrier region formed between the drift region and the anode region and made of first conductivity type semiconductor having a concentration higher than that of the drift region; and
a pillar region made of first conductivity type semiconductor having a concentration higher than that of the barrier region, the pillar region being formed so as to penetrate through the anode region from an anode electrode side, reach the barrier region, and directly connected the barrier region to the anode electrode,
wherein the pillar region and the anode electrode are connected through a Schottky junction.
2. The diode according to claim 1 , further comprising an electric field progress preventing region formed between the barrier region and the drift region and made of second conductivity type semiconductor.
3. The diode according to claim 1 , wherein a trench extending from the anode region to the drift region is formed, and
a trench electrode which is coated with an insulating film is formed inside the trench.
4. The diode according to claim 1 , further comprising a cathode short-circuit region partially formed in the cathode region and made of second conductivity type semiconductor.
5. A semiconductor device comprising the diode according to claim 1 and an IGBT that are integrally formed, the IGBT including:
a collector electrode;
a collector region made of second conductivity type semiconductor;
a second drift region continuously formed from the drift region and made of first conductivity type semiconductor having a concentration lower than that of the cathode region;
a body region made of second conductivity type semiconductor;
an emitter region made of first conductivity type semiconductor;
an emitter electrode made of metal;
a gate electrode opposite to the body region between the emitter region and the second drift region via an insulating film;
a second barrier region formed between the second drift region and the body region and made of first conductivity type semiconductor having a concentration higher than that of the second drift region; and
a second pillar region formed so as to connect the second barrier region to the emitter electrode and made of first conductivity type semiconductor having a concentration higher than that of the second barrier region,
wherein the second pillar region and the emitter electrode are connected through a Schottky junction.
6. The semiconductor device according to claim 5 , further comprising a second electric field progress preventing region formed between the second barrier region and the second drift region and made of second conductivity type semiconductor.