Flexible device manufacturing method and flexible device
View Patent ↗Flexible device manufacturing method including: forming thin film by coating surface of support with predetermined solution in state where hydroxyl groups are present on surface; forming releasing layer by baking thin film; forming flexible substrate on releasing layer; forming device on flexible substrate; and releasing releasing layer, flexible substrate and device from support at interface between support and releasing layer. Predetermined solution contains alkylsilane alkoxide derivative and titanium alkoxide derivative. Baking temperature for baking thin film is at least 200° C. and at most 350° C. Ratio of number of silicon atoms in alkylsilane alkoxide derivative to number of titanium atoms in titanium alkoxide derivative is 3.3:1 to 4.1:1 when baking temperature is at least 200° C. and less than 270° C., 3.3:1 to 23:1 when baking temperature is at least 270° C. and at most 330° C., and 19:1 to 23:1 when baking temperature is more than 330° C. and at most 350° C.
1. A method of manufacturing a flexible device, comprising:
forming a thin film by coating a surface of a support with a predetermined solution in a state where hydroxyl groups are present on the surface;
forming a releasing layer by baking the thin film;
forming a flexible substrate on the releasing layer;
forming an operational device on the flexible substrate; and
releasing the releasing layer, the flexible substrate and the operational device from the support at an interface between the support and the releasing layer to form the flexible device,
wherein the predetermined solution contains alkylsilane alkoxide derivative and titanium alkoxide derivative,
a baking temperature for baking the thin film in the forming the releasing layer is at least 200° C. and at most 350° C.,
a ratio of the number of silicon atoms contained in the alkylsilane alkoxide derivative to the number of titanium atoms contained in the titanium alkoxide derivative is in a range from 3.3:1 to 4.1:1 when the baking temperature is at least 200° C. and less than 270° C.,
the ratio is in a range from 3.3:1 to 23:1 when the baking temperature is at least 270° C. and at most 330° C., and
the ratio is in a range from 19:1 to 23:1 when the baking temperature is more than 330° C. and at most 350° C.
2. The method according to claim 1 ,
wherein in the forming the flexible substrate, the flexible substrate is formed on the releasing layer by a coating method.
3. The method according to claim 1 ,
wherein in the forming the flexible substrate, the flexible substrate is formed from polyimide.
4. The method according to claim 1 ,
wherein the flexible substrate formed in the forming the flexible substrate has a film thickness of 5 μm to 60 μm.
5. The method according to claim 1 ,
wherein the operational device includes a semiconductor device.
6. The method according to claim 1 ,
wherein the operational device includes a display device.
7. The method according to claim 1 ,
wherein the display device is an organic electronic luminescence display device.
8. A flexible device manufactured by the method defined in claim 1 .
9. A flexible device, comprising:
a flexible base substrate;
a releasing layer that is located below the flexible base substrate;
a semiconductor device that is located above the flexible base substrate; and
a display device that is located above the flexible base substrate and controlled by the semiconductor device, wherein
the releasing layer contains polyalkylsiloxane and titanium oxide.
10. The flexible device according to claim 9 ,
wherein a ratio of the number of silicon atoms contained in the polyalkylsiloxane to the number of titanium atoms contained in the titanium oxide is in a range from 3.3:1 to 23:1.
11. The flexible device according to claim 9 ,
wherein the display device is an organic electronic luminescence display device.