Optoelectronic semiconductor module and display having a plurality of such modules

1. A radiation-emitting semiconductor module comprising:

a plurality of light-emitting regions configured to emit light;

an active matrix driving arrangement for driving the light-emitting regions; and

a temperature sensor,

wherein at least two mutually abutting lateral edges of at least one light-emitting region are arranged at an angle of more than 0° and less than 90° with respect to one another,

wherein the light-emitting regions are divided into first and second groups and all light-emitting regions within each group are embodied identically to one another,

wherein the light-emitting regions of the first group are embodied in form of a parallelogram and the angle is in a range of between 15° and 45° inclusive,

wherein the light-emitting regions of the second group are embodied in form of a rectangle or a square,

wherein the groups are arranged laterally alongside one another and are independently energizable,

wherein a distance between two adjacent light-emitting regions is between 1 μm and 20 μm inclusive,

wherein a common conversion layer is disposed downstream of the light-emitting regions in an emission direction, and

wherein the active matrix driving arrangement comprises transistors which are present in form of CMOS structures realized in silicon, the light-emitting regions of the module are electrically and mechanically connected one-to-one to the transistors in CMOS structure.

2. The module according to claim 1 , wherein the first group consists of 10 light-emitting regions arranged in one line and the second group consists of 14 light-emitting regions arranged in two lines.

3. The module according to claim 1 , wherein the angle of the first group is 45°.

4. The module according to claim 1 , wherein the light-emitting regions of the second group are embodied in form of the square.

5. The module according to claim 1 , wherein the light-emitting regions of the second group are arranged in two equal lines.

6. The module according to claim 1 , wherein the module has at least 20×20 light-emitting regions.

7. The module according to claim 1 , wherein the light-emitting regions are arranged in a matrix fashion.

8. The module according to claim 1 , wherein the light-emitting regions are arranged uniformly in a blockwise fashion.

9. The module according to claim 1 , wherein at least one lateral edge of each light-emitting region has a length in a range of between 30 μm and 1 mm, inclusive.

10. The module according to claim 1 , wherein a primary optical unit and a secondary optical unit are disposed downstream of the light-emitting regions in an emission direction.

11. The module according to claim 1 , wherein the light-emitting regions are each independently energizable.

12. The module according to claim 1 , wherein the plurality of light-emitting regions have a common semiconductor body with an active layer suitable for generating radiation so that the light-emitting regions are formed by corresponding energization regions of the semiconductor body.

13. A radiation-emitting semiconductor module comprising:

a plurality of light-emitting regions configured to emit light, the plurality of light-emitting regions has a common semiconductor body with an active layer configured to generate radiation; and

an active matrix driving arrangement for driving the light-emitting regions,

wherein the light-emitting regions are divided into first and second groups and all light-emitting regions within each group are embodied identically to one another,

wherein the light-emitting regions of the first group are embodied in form of a parallelogram and at least two mutually abutting lateral edges of the light emitting regions of the first group are arranged at an angle in a range of between 15° and 45° inclusive,

wherein the light-emitting regions of the second group are embodied in form of a rectangle or a square,

wherein the first and second groups are arranged laterally alongside one another,

wherein a conversion layer is disposed downstream of the light-emitting regions in an emission direction, and

wherein the active matrix driving arrangement comprises transistors which are present in form of CMOS structures realized in a silicon wafer, the light-emitting regions of the module are electrically and mechanically connected one-to-one to the transistors by direct bonding of the semiconductor body and the silicon wafer.

14. An automobile headlight comprising:

a plurality of optoelectronic semiconductor modules according to claim 13 , the modules being arranged directly laterally alongside one another and giving rise to a regular matrix of the light-emitting regions over all modules;

a drive circuit for operating the light-emitting regions of at least one of the modules; and

a projection optical unit disposed downstream of the modules, the projection optical unit configured to combine individual contributions of the radiation emitted by the modules and to form a continuous light matrix,

wherein the automobile headlight fulfills different light functions depending on the driving of the light-emitting regions.

15. A radiation-emitting semiconductor module comprising:

a plurality of light-emitting regions configured to emit light;

a single active matrix driving arrangement for driving the light-emitting regions; and

a temperature sensor integrated in the module,

wherein at least two mutually abutting lateral edges of at least one light-emitting region are arranged at an angle of more than 0° and less than 90° with respect to one another,

wherein the light-emitting regions are divided into first and second groups and all light-emitting regions within each group are embodied identically to one another,

wherein the plurality of light-emitting regions has a common semiconductor body with an active layer suitable for generating radiation,

wherein the light-emitting regions of the first group are embodied in form of a parallelogram and the angle is in a range of between 15 degrees and 45 degrees inclusive,

wherein the light-emitting regions of the second group are embodied in form of a rectangle or a square,

wherein the groups are arranged laterally alongside one another and are independently energizable,

wherein the light-emitting regions are arranged at regular and identical distances from one another and the distances between two adjacent light-emitting regions are between 1 μm and 20 μm inclusive in each case,

wherein a common conversion layer with a constant thickness is disposed downstream of the light-emitting regions in an emission direction,

wherein the conversion layer comprises ceramic converters, wherein the light-emitting regions emit blue radiation which is converted into yellow radiation by the conversion layer such that overall a display emits white light,

wherein the active matrix driving arrangement comprises silicon, transistors in CMOS structure, a micro controller and connection regions, wherein each light emitting region is assigned to a transistor in a one-to-one fashion,

wherein the active matrix driving arrangement is electrically and mechanically directly connected to the light emitting regions via the connection regions by direct bonding, and

wherein the light-emitting regions are located between the active matrix driving arrangement and the conversion layer so that the conversion layer is not in direct contact with the active matrix driving arrangement.