Method of attaching a light emitting device to a support substrate
View Patent ↗A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.
1. A method comprising:
providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device comprising a light emitting layer sandwiched between an n-type region and a p-type region;
providing a wafer of support substrates, each support substrate comprising a body;
bonding the wafer of semiconductor light emitting devices to the wafer of support substrates via a bonding layer; and
after bonding the wafer of semiconductor light emitting devices to the wafer of support substrates, forming vias extending through the entire thickness of the body of each support substrate and through an entire thickness of the bonding layer.
2. The method of claim 1 wherein each support substrate body comprises one of Si, GaAs, and Ge.
3. The method of claim 1 wherein bonding the wafer of semiconductor light emitting devices to the wafer of support substrates comprises bonding via at least one bonding layer.
4. The method of claim 3 wherein the at least one bonding layer comprises regions of metal separated by regions of dielectric, wherein the regions of metal and regions of dielectric are formed on a top surface of the body of each support substrate.
5. The method of claim 3 wherein the at least one bonding layer comprises a polymer layer formed on the wafer of semiconductor light emitting devices.
6. The method of claim 3 wherein the at least one bonding layer comprises an organic adhesive formed on the wafer of semiconductor light emitting devices.
7. The method of claim 3 wherein the at least one bonding layer comprises a first dielectric bonding layer formed on the wafer of semiconductor light emitting devices and a second dielectric bonding layer formed on the wafer of support substrates.
8. The method of claim 7 wherein the first and second dielectric bonding layers comprise an oxide of silicon.
9. The method of claim 1 wherein forming vias extending through the entire thickness of the body of each support substrate comprises etching vias through the entire thickness of the body of each support substrate to reveal at least one metal region.
10. The method of claim 9 wherein the metal region is a metal bonding layer formed on the wafer of support substrates.
11. The method of claim 9 wherein the metal region is a metal contact formed on the wafer of semiconductor light emitting devices and electrically connected to one of the n-type region and the p-type region.
12. The method of claim 1 further comprising dicing the wafer of semiconductor light emitting devices into individual light emitting device chips after bonding the wafer of semiconductor light emitting devices to the wafer of support substrates.
13. The method of claim 12 further comprising removing a growth substrate from the wafer of semiconductor light emitting devices prior to dicing the wafer of semiconductor light emitting devices.
14. The method of claim 13 further comprising roughening a surface of the wafer of semiconductor light emitting devices exposed by removing the growth substrate, wherein roughening occurs prior to dicing the wafer of semiconductor light emitting devices.
15. The method of claim 12 further comprising disposing a wavelength converting layer over the wafer of semiconductor light emitting devices prior to dicing the wafer of semiconductor light emitting devices.