Edge-emitting semiconductor laser
An edge-emitting semiconductor laser includes a first waveguide layer, into which an active layer that generates laser radiation is embedded. The laser also includes a second waveguide layer, into which no active layer is embedded. The laser radiation generated in the active layer forms a standing wave, which has respective intensity maxima in the first waveguide layer and corresponding intensity minima in the second waveguide layer and respective intensity minima in the first waveguide layer and corresponding intensity maxima in the second waveguide layer at periodic intervals in a beam direction of the semiconductor laser. An at least regionally periodic contact structure is arranged at a surface of the edge-emitting semiconductor laser. A period length of the contact structure is equal to a period length of the standing wave, such that the semiconductor laser has an emission wavelength that is set by the period length of the contact structure.
1. An edge-emitting semiconductor laser comprising:
a first waveguide layer, into which an active layer that generates laser radiation is embedded, and
a second waveguide layer, into which no active layer is embedded;
wherein the first waveguide layer is arranged between a first cladding layer and a second cladding layer and the second waveguide layer is arranged between the second cladding layer and a third cladding layer;
wherein the laser radiation generated in the active layer forms a standing wave in a laser resonator formed by side facets of the semiconductor laser, the standing wave having, at periodic intervals in a beam direction of the semiconductor laser, in each case intensity maxima in the first waveguide layer and corresponding intensity minima in the second waveguide layer and intensity minima in the first waveguide layer and corresponding intensity maxima in the second waveguide layer;
wherein an at least regionally periodic contact structure is arranged at a surface of the edge-emitting semiconductor laser;
wherein a period length of the contact structure is equal to a period length of the standing wave, such that the semiconductor laser has an emission wavelength λ that is set by the period length of the contact structure; and
wherein the contact structure has a plurality of periodic partial regions having different periods for generating a plurality of different emission wavelengths.
2. The edge-emitting semiconductor laser according to claim 1 , wherein the emission wavelength λ of the semiconductor laser has a temperature dependence Δλ/ΔT where, |Δλ/ΔT|<0.05 nm/K.
3. The edge-emitting semiconductor laser according to claim 1 , wherein the emission wavelength λ of the semiconductor laser decreases as the temperature increases.
4. The edge-emitting semiconductor laser according to claim 1 , wherein the emission wavelength λ of the semiconductor laser increases as the temperature increases.
5. The edge-emitting semiconductor laser according to claim 1 , wherein the periodic contact structure has contact areas and openings arranged therebetween.
6. The edge-emitting semiconductor laser according to claim 5 , wherein a width of each contact area and of each opening arranged therebetween in the beam direction of the semiconductor laser is half a period length.
7. The edge-emitting semiconductor laser according to claim 5 , wherein at least one side facet of the semiconductor laser adjoins an edge contact area, a width of the edge contact area being half the magnitude of a width of the contact areas of the periodic contact structure.
8. The edge-emitting semiconductor laser according to claim 5 , wherein at least one side facet of the semiconductor laser adjoins an edge opening, a width of the edge opening being half the magnitude of a width of the openings of the periodic contact structure.
9. The edge-emitting semiconductor laser according to claim 1 , wherein the contact structure has at least one non-periodic region.
10. The edge-emitting semiconductor laser according to claim 9 , wherein the at least one non-periodic region adjoins a side facet of the semiconductor laser that is situated opposite a side facet serving as radiation coupling-out area.
11. The edge-emitting semiconductor laser according to claim 1 , wherein the contact structure has a first periodic region and a second periodic region, which are arranged in a manner offset with respect to one another in the beam direction, wherein the first periodic region and the second periodic region are electrically insulated from one another and contact can be made with them separately.
12. The edge-emitting semiconductor laser according to claim 1 , wherein the partial regions are spaced apart from one another in a direction running perpendicular to the beam direction.
13. The edge-emitting semiconductor laser according to claim 1 , wherein the partial regions adjoin one another in a direction running perpendicular to the beam direction.
14. The edge-emitting semiconductor laser according to claim 1 , wherein the partial regions at least partly overlap in the beam direction.