Method for the plasma treatment of workpieces and workpiece with a gas barrier layer
The method serves for the plasma treatment of container-like workpieces. The workpiece is inserted into an at least partially evacuable chamber of a treatment station. The plasma chamber is bounded by a chamber base, a chamber cover and a lateral chamber wall. The plasma treatment causes a coating to be deposited on the workpiece. The plasma is ignited by microwave energy. The coating consists at least of a gas barrier layer and a bonding layer arranged between the workpiece and the gas barrier layer. The gas barrier layer contains SiOx and the bonding layer contains carbon. The gas barrier layer is produced from a gas that contains at least one silicon compound and argon.
1. A method for plasma treatment of a container made of a thermoplastic material, the method comprising:
inserting the container into a plasma chamber; and
depositing a coating on the container following plasma ignition using a vacuum deposition technique;
wherein the plasma is ignited by microwave energy,
wherein the coating comprises a gas barrier layer and a bonding layer arranged between the container and the gas barrier layer,
wherein the gas barrier layer contains SiO x ,
wherein the bonding layer contains carbon,
wherein the gas barrier layer is produced from a mixture of process gases that comprises at least one silicon-containing gas and argon gas,
wherein the silicon-containing gas is present in an amount from 0.5 to 1.5 mole percent of the mixture of process gases,
wherein argon is present in an amount of 40±4 mole percent of the mixture of process gases,
wherein oxygen is present in an amount from 39 to 89 mole percent of the mixture of process gases, and
wherein the silicon-containing process gas is HMDSN.
2. The method according to claim 1 , wherein a pulsed microwave is used to ignite the plasma.
3. The method according to claim 1 , wherein during the production of the barrier layer the process gas is supplied over time in a substantially constant volumetric flow.
4. The method according to claim 1 , wherein the silicon-containing gas is present in an amount from 0.7 to 1.3 mole percent of the mixture of process gases.
5. The method according to claim 1 , wherein the silicon-containing gas is present in an amount of 1.0 mole percent of the mixture of process gases.
6. The method according to claim 1 , wherein argon is present in an amount of about 40 mole percent of the mixture of process gases.