Optoelectronic semiconductor component and method for the production thereof
View Patent ↗An optoelectronic semiconductor device including a carrier substrate and at least one semiconductor chip arranged thereon, wherein the semiconductor chip includes an active layer that generates radiation, conductor tracks electrically contacting the semiconductor chip arranged on the carrier substrate, the semiconductor chip is enclosed in a potting material, and the potting material includes at least a first potting layer, a second potting layer and a third potting layer, which differ from one another in at least one of: their material composition, their optical properties and their chemical properties.
1. An optoelectronic semiconductor device comprising a carrier substrate and at least one semiconductor chip arranged thereon, wherein:
the semiconductor chip comprises an active layer that generates radiation;
conductor tracks electrically contacting the semiconductor chip arranged on the carrier substrate;
the semiconductor chip is enclosed in a potting material; and
the potting material comprises at least a first potting layer, a second potting layer and a third potting layer, which differ from one another in at least one of: their material composition, their optical properties and their chemical properties,
the second potting layer contains pigments that increase reflectivity of the second potting layer;
the second potting layer is arranged on a side of the first potting layer remote from the carrier substrate; and
the second potting layer is arranged between the carrier substrate and the active layer of the semiconductor chip.
2. The semiconductor device according to claim 1 , wherein the potting layers of the potting material are arranged one above the other in a vertical direction.
3. The semiconductor device according to claim 1 , wherein the second potting layer is arranged between the first potting layer and third potting layer.
4. The semiconductor device according to claim 1 , wherein the first potting layer facing the carrier substrate is formed as a gas barrier.
5. The semiconductor device according to claim 4 , wherein the first potting layer is an epoxide layer.
6. The semiconductor device according to claim 1 , wherein the pigments are white pigments.
7. The semiconductor device according to claim 1 , wherein the second potting layer is a silicone layer.
8. The semiconductor device according to claim 1 , wherein the second potting layer comprises a major face on a side of the second potting layer remote from the carrier substrate, said major face being located between the carrier substrate and the active layer of the semiconductor chip.
9. The semiconductor device according to claim 1 , wherein the third potting layer is arranged on a side of the second potting layer remote from the first potting layer and comprises a highly transparent and light-stable material.
10. The semiconductor device according to claim 9 , wherein the third potting layer is a silicone layer.
11. The semiconductor device according to claim 1 , comprising a housing with a cavity in which the semiconductor chip is arranged, wherein the potting material is introduced into the cavity and encloses the semiconductor chip.
12. An optoelectronic semiconductor device comprising a carrier substrate and at least one semiconductor chip arranged thereon, wherein:
the semiconductor chip comprises an active layer that generates radiation;
conductor tracks for electrical contacting of the semiconductor chip are arranged on the carrier substrate;
the semiconductor chip is enclosed in a potting material;
the potting material comprises at least a first potting layer, a second potting layer and a third potting layer, which differ from one another in at least one of: their material composition, their optical properties and their chemical properties;
the first potting layer facing the carrier substrate is an epoxide layer and is formed as a gas barrier;
the first, second and third potting layers are arranged one above the other in a vertical direction, wherein the second potting layer is arranged between the first potting layer and the third potting layer,
the semiconductor chip has a height larger than a height of the first potting layer; and
the third potting layer is applied directly on a radiation exit side of the semiconductor chip.
13. The optoelectronic semiconductor device according to claim 12 , wherein the second potting layer is arranged on a side of the first potting layer remote from the carrier substrate and contains pigments which increase reflectivity of the second potting layer.