High-reliability high-speed memristor
A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
1. A memristor, comprising:
a first electrode;
a second electrode parallel to the first electrode; and
a switching layer disposing between the first and second electrode, and containing a conduction channel and a reservoir zone, the conduction channel having a Fermi glass material having a variable concentration of mobile ions, the reservoir zone being laterally disposed relative to the conduction channel and functioning as a source/sink of mobile ions for the conduction channel during a switching operation, in which the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change a conductivity of the Fermi glass material.
2. A memristor as in claim 1 , wherein the Fermi glass material is a solid solution of a metal and the mobile ions.
3. A memristor as in claim 2 , wherein the metal is tantalum.
4. A memristor as in claim 3 , wherein the mobile ions are oxygen anions.
5. A memristor as in claim 1 , wherein the Fermi glass material is selected from the group of oxides, nitrides, sulfides, phosphorides, chalcogenides, carbides, boronides, and fluorides.
6. A memristor as in claim 1 , wherein the conduction channel has a shape of a truncated cone, with a narrower end in contact with the second electrode.
7. A memristor as in claim 6 , wherein the laterally disposed reservoir zone forms an annular region surrounding the narrower end of the conduction channel.
8. A memristor as in claim 7 , wherein the Fermi glass is a solid solution of tantalum and oxygen.
9. A memristor as in claim 8 , wherein the reservoir zone contains tantalum oxide.
10. A memristor as in claim 9 , wherein the reservoir zone is surrounded by crystallized Ta 2 O 5 .
11. A memristor as in claim 9 , wherein the first electrode is formed of tantalum and the second electrode is formed of platinum.
12. A method of switching a memristor having first and second parallel electrodes, a conduction channel disposed between the first and second electrodes and containing a Fermi glass, and a laterally disposed reservoir zone for sourcing and sinking a species of mobile ions, the method comprising:
applying a first switching voltage to the first and second electrodes to turn the memristor ON, the first switching voltage in cooperation with a first thermal effect causing mobile ions to move from the conduction channel towards the laterally disposed reservoir, thereby reducing a concentration of the mobile ions in the Fermi glass material; and
applying a second switching voltage to the first and second electrodes to turn the memristor OFF, the second switching voltage being opposite in polarity to the first switching voltage and in cooperation with a second thermal effect causing mobile ions to move from the laterally disposed reservoir zone towards the conduction channel, thereby increasing the concentration of the mobile ions in the Fermi glass material.
13. A method as in claim 12 , wherein the Fermi glass is a solid solution of a metal and oxygen.
14. A method as in claim 13 , wherein the metal is tantalum.
15. A method as in claim 13 , wherein the first thermal effect is thermophoresis, and the second thermal effect is thermal diffusion.