SEMICONDUCTOR LIGHT EMITTING ELEMENT
A semiconductor light emitting element includes: a light-transmitting substrate; a semiconductor layer including an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer stacked on the substrate; a transparent conductive layer provided on the semiconductor layer; a multilayer reflective layer stacked on a reflective region of an upper surface of the transparent conductive layer which is divided into the reflective region and a conductive region; and a metal reflective layer provided so as to cover the conductive region and the multilayer reflective layer, wherein the multilayer reflective layer is formed by alternately stacking at least one first refractive index transparent layer having a refractive index of n1 and at least one second refractive index transparent layer having a refractive index of n2 lower than n1, and an outermost layer on the metal reflective layer side of the multilayer reflective layer is the second refractive index transparent layer.
1 . A semiconductor light emitting element, comprising:
a light-transmitting substrate;
a semiconductor layer including an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer which are stacked on the substrate;
a transparent conductive layer provided on the semiconductor layer;
a multilayer reflective layer stacked on a reflective region of an upper surface of the transparent conductive layer which is divided into the reflective region as a region where light from the light-emitting layer is reflected and a conductive region as a region other than the reflective region; and
a metal reflective layer provided so as to cover the conductive region and the multilayer reflective layer, wherein
the multilayer reflective layer is formed by alternately stacking at least one first refractive index transparent layer having a refractive index of n1 and at least one second refractive index transparent layer having a refractive index of n2 lower than n1, and
an outermost layer on the metal reflective layer side of the multilayer reflective layer is the second refractive index transparent layer.
2 . The semiconductor light emitting element of claim 1 , wherein
the first refractive index transparent layer has a thickness of λ/4n1, and
the second refractive index transparent layer has a thickness of λ/4n2 (where λ represents a wavelength of the light emitted from the light-emitting layer).
3 . The semiconductor light emitting element of claim 2 , wherein
a dielectric layer having a lower refractive index than the second refractive index transparent layer and having a thickness larger than λ/4 is provided between the multilayer refractive layer and the transparent conductive layer.
4 . The semiconductor light emitting element of claim 1 , wherein
an outermost layer on the light-emitting layer side of the multilayer reflective layer is the first refractive index transparent layer.
5 . The semiconductor light emitting element of claim 1 , wherein
an outermost layer on the light-emitting layer side of the multilayer reflective layer is the second refractive index transparent layer.
6 . The semiconductor light emitting element of claim 1 , wherein
the P-type semiconductor layer has a refractive index higher than n2.
7 . The semiconductor light emitting element of claim 1 , wherein
the second refractive index transparent layer is comprised of Al 2 O 3 , and
the metal reflective layer is comprised of Ag.
8 . The semiconductor light emitting element of claim 2 , wherein
an outermost layer on the light-emitting layer side of the multilayer reflective layer is the first refractive index transparent layer.
9 . The semiconductor light emitting element of claim 3 , wherein
an outermost layer on the light-emitting layer side of the multilayer reflective layer is the first refractive index transparent layer.
10 . The semiconductor light emitting element of claim 2 , wherein
an outermost layer on the light-emitting layer side of the multilayer reflective layer is the second refractive index transparent layer.
11 . The semiconductor light emitting element of claim 3 , wherein
an outermost layer on the light-emitting layer side of the multilayer reflective layer is the second refractive index transparent layer.
12 . The semiconductor light emitting element of claim 2 , wherein
the P-type semiconductor layer has a refractive index higher than n2.
13 . The semiconductor light emitting element of claim 3 , wherein
the P-type semiconductor layer has a refractive index higher than n2.
14 . The semiconductor light emitting element of claim 4 , wherein
the P-type semiconductor layer has a refractive index higher than n2.
15 . The semiconductor light emitting element of claim 5 , wherein
the P-type semiconductor layer has a refractive index higher than n2.
16 . The semiconductor light emitting element of claim 2 , wherein
the second refractive index transparent layer is comprised of Al 2 O 3 , and
the metal reflective layer is comprised of Ag.
17 . The semiconductor light emitting element of claim 3 , wherein
the second refractive index transparent layer is comprised of Al 2 O 3 , and
the metal reflective layer is comprised of Ag.
18 . The semiconductor light emitting element of claim 4 , wherein
the second refractive index transparent layer is comprised of Al 2 O 3 , and
the metal reflective layer is comprised of Ag.
19 . The semiconductor light emitting element of claim 5 , wherein
the second refractive index transparent layer is comprised of Al 2 O 3 , and
the metal reflective layer is comprised of Ag.
20 . The semiconductor light emitting element of claim 6 , wherein
the second refractive index transparent layer is comprised of Al 2 O 3 , and
the metal reflective layer is comprised of Ag.