Elastic wave device
View Patent ↗A reflector of the elastic wave resonator in an elastic wave device has first and second regions. The second region has third and fourth regions. The first region is located near to the IDTs of the reflector, while the second region is located farther from them. The third region is located nearer to the IDTs in the second region, while the fourth region is located farther from them. As a result that the center frequency of the reflection band in the fourth region is lower than that in the third region, an elastic wave device with low energy loss and insertion loss is provided.
1. An elastic wave device comprising:
a piezoelectric substrate;
a high-frequency filter formed on the piezoelectric substrate having a high-frequency passband; and
a low-frequency filter formed on the piezoelectric substrate having a low-frequency passband lower than the high frequency passband, the low-frequency filter including a first elastic wave resonator, the first elastic wave resonator having a plurality of interdigital transducers disposed between a pair of reflectors, at least one reflector of the pair of reflectors having a first region and a second region, the second region having a third region and a fourth region, the first region located nearer to the plurality of interdigital transducers than the second region, the third region located nearer to the plurality of interdigital transducers than the fourth region, a reflection band in the first region covering the low-frequency passband, a reflection band in the second region covering the high-frequency passband, and a center frequency of a reflection band in the fourth region being lower than a center frequency of a reflection band of the third region.
2. The elastic wave device of claim 1 wherein the first elastic wave resonator is directly connected to a first balanced output terminal.
3. The elastic wave device of claim 1 wherein the low-frequency filter further includes a second elastic wave resonator connected to the first elastic wave resonator.
4. The elastic wave device of claim 1 wherein the reflection band in the fourth region corresponds to a low-frequency side of the reflection band in the second region and the reflection band in the third region corresponds to a high-frequency side of the reflection band in the second region.
5. The elastic wave device of claim 1 wherein a pitch of grid electrodes in the third and the fourth regions controls a frequency of the reflection band in the second region.
6. The elastic wave device of claim 1 wherein each of the reflection bands in the first, the second, the third, and the fourth regions is controlled by the average pitch of grid electrodes in each respective region.
7. The elastic wave device of claim 1 wherein the first elastic wave resonator is a longitudinally coupled elastic wave resonator.
8. The elastic wave device of claim 1 wherein an average pitch of grid electrodes in the second region is narrower than an average pitch of grid electrodes in the first region.
9. The elastic wave device of claim 8 wherein an average pitch of grid electrodes in the third region is narrower than an average pitch of grid electrodes in the fourth region.
10. The elastic wave device of claim 1 wherein the reflection band in the third region overlaps the reflection band in the fourth region.
11. The elastic wave device of claim 1 further comprising a second elastic wave resonator electrically connected between the first elastic wave resonator and an unbalanced input terminal.
12. An elastic wave device comprising:
a piezoelectric substrate;
a low-frequency filter formed on the piezoelectric substrate having a low-frequency passband; and
a high-frequency filter formed on the piezoelectric substrate having a high-frequency passband higher than the low-frequency passband, the high-frequency filter including a first elastic wave resonator, the first elastic wave resonator having a plurality of interdigital transducers disposed between a pair of reflectors, at least one reflector of the pair of reflectors having a first region and a second region, the second region having a third region and a fourth region, the first region located nearer to the plurality of interdigital transducers than the second region, the third region located nearer to the plurality of interdigital transducers than the fourth region, a reflection band in the first region covering the high-frequency passband, a reflection band in the second region covering the low-frequency passband, and a center frequency of a reflection band in the fourth region being higher than a center frequency of a reflection band in the third region.
13. The elastic wave device of claim 12 wherein the high-frequency filter further includes a second elastic wave resonator connected to the first elastic wave resonator.
14. The elastic wave device of claim 12 wherein the first elastic wave resonator is directly connected to a first balanced output terminal.
15. The elastic wave device of claim 12 wherein the reflection band in the fourth region corresponds to a high-frequency side of the reflection band in the second region and the reflection band in the third region corresponds to a low-frequency side of the reflection band in the second region.
16. The elastic wave device of claim 12 wherein an average pitch of grid electrodes in the second region is wider than an average pitch of grid electrodes in the first region.
17. The elastic wave device of claim 16 wherein an average pitch of grid electrodes in the third region is wider than an average pitch of grid electrodes in the fourth region.
18. The elastic wave device of claim 12 wherein the reflection band in the third region overlaps the reflection band in the fourth region.
19. The elastic wave device of claim 12 further comprising a second elastic wave resonator electrically connected between the first elastic wave resonator and an unbalanced input terminal.
20. An elastic wave device comprising:
a piezoelectric substrate;
a high-frequency filter formed on the piezoelectric substrate having a high-frequency passband; and
a low-frequency filter formed on the piezoelectric substrate having a low-frequency passband lower than the high-frequency passband, the low-frequency filter including a first elastic wave resonator having a first plurality of interdigital transducers disposed between a first pair of reflectors, at least one reflector of the first pair of reflectors having a first region and a second region, the second region having a third region and a fourth region, the first region located nearer to the first plurality of interdigital transducers than the second region, the third region located nearer to the first plurality of interdigital transducers than the fourth region, a reflection band in the first region covering the low-frequency passband, a reflection band in the second region covering the high-frequency passband, and a center frequency of a reflection band in the fourth region being lower than a center frequency of a reflection band of the third region, the high-frequency filter including a second elastic wave resonator having a second plurality of interdigital transducers disposed between a second pair of reflectors, at least one reflector of the second pair of reflectors having a fifth region and a sixth region, the sixth region having a seventh region and an eighth region, the fifth region located nearer to the second plurality of interdigital transducers than the sixth region, the seventh region located nearer to the second plurality of interdigital transducers than the eighth region, a reflection band in the fifth region covering the high-frequency passband, a reflection band in the sixth region covering the low-frequency passband, and a center frequency of a reflection band in the eighth region being higher than a center frequency of a reflection band in the seventh region.