Photovoltaic device
View Patent ↗A photovoltaic device may be provided having a semiconductor substrate, an i-type amorphous layer or an i-type amorphous layer formed over a front surface or a back surface of the semiconductor substrate, and a p-type amorphous layer or an n-type amorphous layer formed over the i-type amorphous layer or the i-type amorphous layer. The i-type amorphous layer or the i-type amorphous layer has an oxygen concentration profile in which a concentration is reduced in a step-shape from a region near an interface with the semiconductor substrate and along a thickness direction.
1. A photovoltaic device comprising:
a crystalline semiconductor substrate of a first conductive type;
a first amorphous semiconductor layer which is intrinsic and formed over a first surface of the semiconductor substrate; and
a second amorphous semiconductor layer of the first conductive type or of a conductive type opposite of the first conductive type and formed over the first amorphous semiconductor layer, wherein
an oxygen concentration in a high-oxygen-concentration region within 5 nm near the interface between the semiconductor substrate and the first amorphous semiconductor layer is greater than or equal to 1×10 20 /cm 3 and less than or equal to 1×10 21 /cm 3 ,
wherein a profile of the oxygen concentration in the high-oxygen concentration region is reduced in a step shape near an interface with the semiconductor substrate along a thickness direction, and a slope of the profile has at least two peaks,
and wherein an oxygen concentration in regions in the first amorphous semiconductor layer other than the high-oxygen-concentration region is less than 1×10 20 /cm 3 .
2. The photovoltaic device according to claim 1 , further comprising:
a third amorphous semiconductor layer which is intrinsic and formed over a second surface, opposite to the first surface, of the semiconductor substrate; and
a fourth amorphous semiconductor layer of an opposite conductive type to that of the second amorphous semiconductor layer and formed over the third amorphous semiconductor layer, wherein
a profile of the oxygen concentration is reduced in a step shape near an interface with the semiconductor substrate along a thickness direction, and a slope of the profile has at least two peaks.
3. A photovoltaic device comprising:
a crystalline semiconductor substrate; and an amorphous semiconductor layer formed over the crystalline semiconductor substrate;
wherein an oxygen concentration in a high-oxygen-concentration region within 5 nm near the interface between the crystalline semiconductor substrate and the amorphous semiconductor layer is greater than or equal to 1×10 20 /cm 3 and less than or equal to 1×10 21 /cm 3 ,
wherein a profile of the oxygen concentration in the high-oxygen concentration region is reduced in a step shape near an interface with the semiconductor substrate along a thickness direction, and a slope of the profile has at least two peaks,
and wherein an oxygen concentration in regions in the amorphous semiconductor layer other than the high-oxygen-concentration region is less than 1×10 20 /cm 3 .