Fabrication of III-nitride semiconductor device and related structures
View Patent ↗A method of fabricating a III-nitride power semiconductor device that includes growing a transition layer over a substrate using at least two distinct and different growth methods.
1. A method of fabricating a power semiconductor device, comprising:
providing a substrate;
growing a first III-nitride layer using a first growth method selected from the group consisting of MBE and HVPE, and a second III-nitride layer over said at least first III-nitride layer using a second growth method selected from the group consisting of MOCVD and HVPE, and a third III-nitride layer over said second III-nitride layer using an MOCVD growth method;
forming an active semiconductor region over said third III-nitride layer, wherein at least one of said first, second, and third III-nitride layers act to transition lattice mismatch and thermal expansion characteristics between said substrate and said active semiconductor region.
2. The method of claim 1 , wherein said active semiconductor region comprises first and second III-nitride semiconductor bodies.
3. The method of claim 1 , wherein said substrate comprises silicon.
4. The method of claim 1 , wherein said substrate comprises silicon carbide.
5. The method of claim 1 , wherein said substrate comprises sapphire.
6. The method of claim 1 , wherein said first method is MBE and said second method is HVPE.
7. The method of claim 1 , wherein said first method is MOCVD and said second method is HVPE.
8. The method of claim 1 , wherein said first III-nitride layer comprises AIN.
9. The method of claim 1 , wherein said second III-nitride layer comprises AIN.
10. The method of claim 1 , wherein said third III-nitride layer comprises AIN.
11. The method of claim 1 , wherein said first III-nitride layer has a uniform composition.
12. The method of claim 1 , wherein said first III-nitride layer has a graded composition.
13. The method of claim 1 , wherein said second III-nitride layer has a uniform composition.
14. The method of claim 1 , wherein said second III-nitride layer has a graded composition.
15. The method of claim 1 , wherein said third III-nitride layer has a uniform composition.
16. The method of claim 1 , wherein said third III-nitride layer has a graded composition.
17. The method of claim 1 , wherein a composition of said first III-nitride layer is different from a composition of said second III-nitride layer.
18. The method of claim 1 , wherein a composition of said second III-nitride layer is different from a composition of said third III-nitride layer.
19. The method of claim 1 , wherein a composition of said first III-nitride layer is different from a composition of said second III-nitride layer and from a composition of said third III-nitride layer.
20. The method of claim 1 , wherein a composition of said first III-nitride layer is different from a composition of said second III-nitride layer and from a composition of said third III-nitride layer, and a composition of said second III-nitride layer is different from a composition of said third III-nitride layer.