Passive SRAM write assist
View Patent ↗Passive write assist passively improves SRAM performance (e.g., write margin speed) while reducing manufacturing costs (e.g., die area, packaging) and operating costs (e.g., power consumption, cooling) associated with active write assist schemes. Passive write assist may be implemented in peripheral circuitry or embedded in an SRAM array or even in each array cell or bitcell. For example, one or more memory cells may be converted to provide passive write assist to a plurality of other memory cells. As another example, each memory cell may independently implement passive write assist using one or more high resistive contacts to couple to the array power supply, resulting in the array voltage level being changed by different amounts in different memory cells according to cell variations.
1. A method comprising:
providing passive write assist to a memory comprising an array of memory cells by:
supplying power having a voltage level to the array of memory cells, the memory cells having a write margin at the voltage level;
passively changing the voltage level with a circuit element that does not receive control signaling, creating a passively improved write margin for the array of memory cells, wherein the circuit element comprises a first transistor having a gate node coupled to ground, a source node coupled to a power supply having the voltage level and a drain node coupled to the array of memory cells and a second transistor having a gate node coupled to the power supply having the voltage level, a source node coupled to the drain node of the first transistor and a drain node coupled to ground; and
performing a write operation to the array of memory cells having the passively improved write margin.
2. The method of claim 1 , wherein the passive write assist is embedded in the array of memory cells.
3. The method of claim 2 , wherein the embedded passive write assist comprises a memory cell in the array of memory cells converted to provide passive write assist to a plurality of other memory cells in the array of memory cells.
4. The method of claim 3 , wherein the plurality of other memory cells comprises one of 16, 32, 64, 128 and 256 memory cells.
5. The method of claim 1 , wherein the first transistor is a PMOS transistor.
6. The method of claim 1 , wherein the second transistor is a PMOS transistor.
7. The method of claim 2 , wherein the passive write assist is embedded in each memory cell of the array of memory cells.
8. The method of claim 2 , wherein the circuit element further comprises at least one high resistive contact coupling each memory cell of the array of memory cells to the power supply having the voltage level.
9. The method of claim 8 , wherein the voltage level is changed by different amounts in different memory cells.
10. A device comprising:
a memory comprising an array of memory cells having a write margin at a voltage level of power supplied to the array of memory cells; and
a passive write assist that passively changes the voltage level with a circuit element that does not receive control signaling and improves the write margin during a write operation to the memory, wherein the circuit element comprises a first transistor having a gate node coupled to ground, a source node coupled to a power supply having the voltage level and a drain node coupled to the array of memory cells and a second transistor having a gate node coupled to the power supply having the voltage level, a source node coupled to the drain node of the first transistor and a drain node coupled to ground.
11. The device of claim 10 , wherein the passive write assist is embedded in the array of memory cells.
12. The device of claim 11 , wherein the embedded passive write assist comprises a memory cell in the array of memory cells converted to provide passive write assist to a plurality of other memory cells in the array of memory cells.
13. The device of claim 12 , wherein the plurality of other memory cells comprises one of 16, 32, 64, 128 and 256 memory cells.
14. The device of claim 10 , wherein the first transistor is a PMOS transistor.
15. The device of claim 10 , wherein the second transistor is a PMOS transistor.
16. The device of claim 11 , wherein the passive write assist is embedded in each memory cell of the array of memory cells.
17. The device of claim 16 , wherein the circuit element further comprises at least one high resistive contact coupling each memory cell of the array of memory cells to the power supply having the voltage level.
18. A device comprising:
a static random access memory (SRAM) comprising:
an array of bit cells having a write margin at a voltage level of power supplied to the array of bit cells; and
a passive write assist embedded in the array of bit cells, the embedded passive write assist passively changing the voltage level with a circuit element that does not receive control signaling and improving the write margin during a write operation to the SRAM, wherein the circuit element comprises a first transistor having a gate node coupled to ground, a source node coupled to a power supply having the voltage level and a drain node coupled to the array of bit cells and a second transistor having a gate node coupled to the power supply having the voltage level, a source node coupled to the drain node of the first transistor and a drain node coupled to ground.
19. The device of claim 18 , wherein the embedded passive write assist is embedded in each bit cell of the array of bit cells.
20. The device of claim 18 , wherein the embedded passive write assist comprises a bit cell in the array of bit cells converted to provide passive write assist to a plurality of other bit cells in the array of bit cells.