BARRIER-LESS METAL SEED STACK AND CONTACT
Approaches for forming barrier-less seed stacks and contacts are described. In an example, a solar cell includes a substrate and a conductive contact disposed on the substrate. The conductive contact includes a copper layer directly contacting the substrate. In another example, a solar cell includes a substrate and a seed layer disposed directly on the substrate. The seed layer consists essentially of one or more non-diffusion-barrier metal layers. A conductive contact includes a copper layer disposed directly on the seed layer. An exemplary method of fabricating a solar cell involves providing a substrate, and forming a seed layer over the substrate. The seed layer includes one or more non-diffusion-barrier metal layers. The method further involves forming a conductive contact for the solar cell from the seed layer.
1 . A solar cell comprising:
a substrate; and
a conductive contact disposed on the substrate and comprising a copper layer directly contacting the substrate.
2 . The solar cell of claim 1 , wherein:
the substrate comprises a monocrystalline silicon substrate with a polycrystalline silicon layer disposed in or above the monocrystalline silicon substrate; and
the copper layer directly contacts the polycrystalline silicon layer.
3 . The solar cell of claim 2 , wherein:
the substrate further comprises one or more dielectric layers disposed over the polycrystalline silicon layer, wherein the copper layer directly contacts the polycrystalline silicon layer through gaps in the one or more dielectric layers.
4 . The solar cell of claim 1 , wherein:
the substrate comprises a monocrystalline silicon substrate; and
the copper layer directly contacts the monocrystalline silicon substrate.
5 . The solar cell of claim 4 , wherein:
the substrate further comprises one or more dielectric layers disposed over the monocrystalline silicon substrate, wherein the copper layer directly contacts the monocrystalline silicon substrate through gaps in the one or more dielectric layers.
6 . The solar cell of claim 1 , wherein:
the substrate comprises a monocrystalline silicon substrate with a polycrystalline silicon layer disposed in or above the monocrystalline silicon substrate, and wherein the polycrystalline silicon layer has a doping concentration of at least 10 18 per cm 3 .
7 . A solar cell comprising:
a substrate;
a seed layer disposed directly on the substrate, the seed layer consisting essentially of one or more non-diffusion-barrier metal layers; and
a conductive contact comprising a copper layer disposed directly on the seed layer.
8 . The solar cell of claim 7 , wherein:
the substrate comprises a monocrystalline silicon substrate with a polycrystalline silicon layer disposed in or above the monocrystalline silicon substrate; and
the seed layer directly contacts the polycrystalline silicon layer.
9 . The solar cell of claim 8 , wherein the substrate further comprises one or more dielectric layers disposed over the polycrystalline silicon layer, wherein the seed layer directly contacts the polycrystalline silicon layer through gaps in the one or more dielectric layers.
10 . The solar cell of claim 7 , wherein:
the substrate comprises a monocrystalline silicon substrate;
the seed layer directly contacts the monocrystalline silicon substrate.
11 . The solar cell of claim 10 , wherein:
the substrate further comprises one or more dielectric layers disposed over the monocrystalline silicon substrate, wherein the seed layer directly contacts the monocrystalline silicon substrate through gaps in the one or more dielectric layers.
12 . The solar cell of claim 7 , wherein the one or more non-diffusion-barrier metal layers comprise an aluminum or silver seed layer directly contacting the substrate, and a copper seed layer directly contacting the aluminum or silver seed layer.
13 . A method of fabricating a solar cell, the method comprising:
providing a substrate;
forming a seed layer over the substrate, the seed layer consisting essentially of one or more non-diffusion-barrier metal layers; and
forming a conductive contact for the solar cell from the seed layer.
14 . The method of claim 13 , wherein:
providing the substrate comprises providing a monocrystalline silicon substrate, and forming a polycrystalline silicon layer in or above the monocrystalline silicon substrate; and
forming the seed layer over the substrate comprises forming the seed layer directly on the polycrystalline silicon layer.
15 . The method of claim 14 , wherein:
providing the substrate further comprises providing one or more patterned dielectric layers disposed over the polycrystalline silicon layer; and
forming the seed layer comprises directly forming the seed layer on the polycrystalline silicon layer through gaps in the one or more patterned dielectric layers.
16 . The method of claim 13 , wherein:
providing the substrate comprises providing a monocrystalline silicon substrate; and
forming the seed layer comprises forming the seed layer directly on the monocrystalline silicon substrate.
17 . The method of claim 16 , wherein:
providing the substrate further comprises providing one or more patterned dielectric layers disposed over the monocrystalline silicon substrate; and
forming the seed layer comprises forming the seed layer directly on the monocrystalline silicon substrate through gaps in the one or more patterned dielectric layers.
18 . The method of claim 13 , wherein forming the conductive contact for the solar cell from the seed layer comprises annealing the seed layer at a temperature in a range of 50 to 450° C.
19 . The method of claim 13 , wherein:
providing the substrate comprises providing a monocrystalline silicon substrate with a polycrystalline silicon layer disposed in or above the monocrystalline silicon substrate, wherein the polycrystalline silicon layer has a doping concentration of at least 10 18 per cm 3 .
20 . The method of claim 13 , wherein forming the conductive contact for the solar cell from the seed layer comprises:
annealing the seed layer;
applying a patterned plating resist to the seed layer;
plating a metal onto the patterned seed layer to form a plurality of metal contacts on the seed layer; and
etching portions of the seed layer between the plurality of metal contacts.