NANOWIRE DEVICE

1 . A nanowire device comprising:

a base layer;

a nanowire on and protruding away from a first surface of the base layer; wherein the nanowire comprises a core, a shell, and an active layer between the core and the shell;

a top electrode layer on a second surface of the base layer opposite the first surface and in electrical contact with the core; and

a bottom electrode layer on and in electrical contact with the shell.

2 . The nanowire device of claim 1 , wherein the top electrode layer is formed of a transparent or semi-transparent material.

3 . The nanowire device of claim 2 , wherein the top electrode layer covers substantially all the second surface of the base layer.

4 . The nanowire device of claim 3 , wherein the bottom electrode includes a layer stack.

5 . The nanowire device of claim 4 , wherein the bottom electrode includes a mirror layer.

6 . The nanowire device of claim 4 , wherein the bottom electrode includes a bonding layer formed of a noble metal.

7 . The nanowire device of claim 3 , comprising:

a plurality of nanowires on and protruding away from the first surface of the base layer;

wherein each nanowire comprises a core, a shell, and an active layer between the core and the shell;

wherein the top electrode layer is on the second surface of the base layer opposite the first surface and in electrical contact with the core of each nanowire; and

one or more bottom electrode layers on and in electrical contact with the shells of the plurality of nanowires.

8 . The nanowire device of claim 7 , comprising a corresponding plurality of bottom electrode layers on and in electrical contact with the shells of the plurality of nanowires.

9 . The nanowire device of claim 7 , further comprising a patterned mask layer on the base layer, wherein the cores of the plurality of nanowires extend through corresponding openings in the patterned mask layer.

10 . The nanowire device of claim 9 , further comprising a through-hole through an entire thickness of the base layer and the mask layer located laterally between two nanowires.

11 . A structure comprising:

a carrier substrate,

a stabilization layer on the carrier substrate, the stabilization layer including an array of staging cavities;

an array of nanowire devices within the array of staging cavities:

wherein each nanowire device comprises:

a base layer characterized by a maximum width of the micro scale; and

a nanowire on and protruding away from the base layer, the nanowire characterized by a maximum width of the nano scale.

12 . The structure of claim 11 , further comprising a sacrificial release layer spanning between the stabilization layer and the array of nanowire devices.

13 . The structure of claim 12 , wherein the array of nanowire devices are embedded in the sacrificial release layer.

14 . The nanowire device of claim 11 , wherein the stabilization layer comprises a thermoset material.

15 . The nanowire device of claim 11 , wherein each nanowire comprises a core, a shell, and an active layer between the core and the shell.

16 . The nanowire device of claim 15 , further comprising a bottom electrode layer on and in electrical contact with the shell for each nanowire.

17 . The nanowire device of claim 16 , wherein the sacrificial release layer spans along a bottom-most location of the bottom electrode layer for each nanowire.

18 . The nanowire device of claim 17 , wherein the sacrificial release layer includes an array of openings such that the sacrificial release layer does not span along a bottom-most location of the bottom electrode layer for each nanowire.

19 . The nanowire device of claim 18 , wherein the bottom electrode layer for each nanowire is in direct contact with the stabilization layer.

20 . A method of forming a nanostructure comprising:

depositing a bottom electrode layer on a nanowire, wherein the nanowire protrudes from a base layer formed on a handle substrate, and the nanowire comprises a core, a shell, and an active layer between the core and the shell;

etching a mesa trench through the base layer, wherein the mesa trench laterally surrounds the nanowire;

depositing a sacrificial release layer over the base layer and nanowire, and within the mesa trench;

bonding the handle substrate to a carrier substrate with a stabilization layer, wherein the nanowire is retained within the stabilization layer; and

removing the handle substrate.

21 . The method of claim 20 , wherein bonding the handle substrate to the carrier substrate with the stabilization layer comprises:

coating a thermosetting material over the sacrificial release layer; and

curing the thermosetting material.

22 . The method of claim 20 , wherein bonding the handle substrate to the carrier substrate with the stabilization layer comprises:

coating a foundation layer over the sacrificial release layer;

reducing a thickness of the foundation layer;

removing a portion of the sacrificial release layer to expose a portion of the bottom electrode layer over the nanowire; and

coating a cap layer over the foundation layer.

23 . A method comprising:

picking up an array of nanowire devices from a carrier substrate with an electrostatic transfer head assembly supporting an array of electrostatic transfer heads;

contacting a receiving substrate with the array of nanowire devices;

bonding the array of nanowire devices to the receiving substrate; and

releasing the array nanowire devices onto the receiving substrate.

24 . The method of claim 23 , wherein each nanowire device comprises:

a base layer;

a nanowire on and protruding away from a first surface of the base layer; wherein the nanowire comprises a core, a shell, and an active layer between the core and the shell;

a top electrode layer on a second surface of the base layer opposite the first surface and in electrical contact with the core; and

a bottom electrode layer on and in electrical contact with the shell.

25 . The method of claim 23 , wherein each nanowire device comprises:

a base layer characterized by a maximum width of the micro scale; and

a nanowire on and protruding away from the base layer, the nanowire characterized maximum width of the nano scale.

26 . The method of claim 23 , wherein picking up the array of nanowire devices from the carrier substrate with the electrostatic transfer head assembly supporting the array of electrostatic transfer heads comprises:

contacting the top electrode layer of each nanowire device with a corresponding electrostatic transfer head.

27 . The method of claim 23 , further comprising removing a sacrificial release layer between the array of nanowire devices and the carrier substrate prior to picking up the array of nanowire devices.