Semiconductor device and method of manufacturing the same

1. A method of manufacturing a semiconductor device having a first memory cell,

wherein a process of forming the first memory cell comprises:

(a) depositing a first insulating film over a semiconductor substrate to form a first gate insulating film;

(b) forming a first conductive film over the first gate insulating film;

(c) forming a second insulating film over the first conductive film;

(d) processing the second insulating film and the first conductive film to form a selection gate electrode made of the first conductive film and a cap insulating film made of the second insulating film over the selection gate electrode;

(e) removing the cap insulating film over the selection gate electrode in a region in which a first plug supplying a voltage to the selection gate electrode is formed, while leaving the cap insulating film over the selection gate electrode in a region in which the first memory cell is formed;

(f) after the step (e), forming a second gate insulating film made of a third insulating film over the semiconductor substrate;

(g) forming a second conductive film over the second gate insulating film;

(h) subjecting the second conductive film to anisotropic etching to form a memory gate electrode over a side surface of a stacked film made up of the cap insulating film and the selection gate electrode;

(i) after the step (h), forming a first source region and a first drain region in the semiconductor substrate in the region in which the first memory cell is formed; and

(j) after the step (i), forming a silicide layer over an upper surface of the memory gate electrode, an upper surface of the selection gate electrode in the region in which the first plug supplying the voltage to the selection gate electrode is formed, and upper surfaces of the first source region and the first drain region in the region in which the first memory cell is formed.

2. The method of manufacturing the semiconductor device according to claim 1 ,

wherein, for the region in which the first plug supplying the voltage to the selection gate electrode is formed, the process further comprises:

forming an interlayer insulating film over the semiconductor substrate, the selection gate electrode and the memory gate electrode;

forming a first contact hole in the interlayer insulating film; and

embedding a third conductive film in the first contact hole to form the first plug, and

the first plug is connected to the silicide layer over the upper surface of the selection gate electrode.

3. The method of manufacturing the semiconductor device according to claim 1 ,

wherein the semiconductor device further has a capacitive element, and a process of forming the capacitive element comprises:

processing the second insulating film and the first conductive film to form a lower electrode of the capacitive element made of the first conductive film and a cap insulating film made of the second insulating film over the lower electrode in the step (d);

removing the cap insulating film over the lower electrode in the step (e);

forming the third insulating film over the lower electrode in the step (f);

forming a third conductive film over the third insulating film in the step (g); and

forming an upper electrode of the capacitive element so as to cover the lower electrode in the step (h), and

the third insulating film formed in a region in which the capacitive element is formed in the step (f) functions as a capacitive insulating film of the capacitive element.

4. The method of manufacturing the semiconductor device according to claim 1 ,

wherein the second gate insulating film is an insulating film including a charge accumulating layer.

5. The method of manufacturing the semiconductor device according to claim 4 ,

wherein the charge accumulating layer is a silicon nitride film.

6. The method of manufacturing the semiconductor device according to claim 1 ,

wherein, for a region in which a second plug supplying a voltage to the memory gate electrode is formed, the process further comprises:

leaving the cap insulating film over the selection gate electrode in the step (e);

forming an interlayer insulating film over the semiconductor substrate, the selection gate electrode and the memory gate electrode;

forming a second contact hole in the interlayer insulating film; and

embedding a third conductive film in the second contact hole to form the second plug, and

the second plug is connected to the silicide layer over the upper surface of the memory gate electrode and is formed so as to cover a part of the cap insulating film.

7. The method of manufacturing the semiconductor device according to claim 1 ,

wherein the forming the third insulating film in the step (f) includes:

after the step (e), forming a fourth insulating film over the semiconductor substrate;

a step of forming a charge accumulating layer over the fourth insulating film; and

forming a fifth insulating film over the charge accumulating layer.

8. The method of manufacturing the semiconductor device according to claim 7 ,

wherein the charge accumulating layer is a silicon nitride film.

9. The method of manufacturing the semiconductor device according to claim 6 ,

wherein, in the region in which the first plug supplying the voltage to the selection gate electrode is formed and in the region in which the second plug supplying the voltage to the memory gate electrode is formed, a device isolation part made of an insulating film is formed in the semiconductor substrate.