Very small pixel pitch focal plane array and method for manufacturing thereof

1. A method for manufacturing an imaging device, the method comprising:

forming a contact pad over a surface of a semiconductor substrate, the contact pad having a malleable metallic material;

providing a readout circuit having a first side and a contact plug, the contact plug having a base affixed to the first side and a plurality of prongs extending from the base away from the first side; and

moving the first side of the readout circuit towards the substrate surface so that the prongs of the contact plug are pressed into the pad and displace a portion of the pad into a space defined by and between a first and a second of the prongs.

2. The method of claim 1 wherein the contact pad is formed over a photodetector formed in the semiconductor substrate.

3. The method of claim 1 wherein the method further comprises:

forming a first pair of stop elements over the substrate surface so that the contact pad is disposed between the first pair of stop elements; and

providing a second pair of stop elements on the first side of the readout circuit so that the base of each contact plug is disposed between the second pair of stop elements and in substantial alignment with the first pair of stop elements formed over the substrate surface,

wherein the first side of the readout circuit is moved towards the substrate surface in substantial axial alignment with the first and second pairs of stop elements until the first pair of stop elements contacts the second pair of stop elements, and a first of the first pair of stop elements and a first of the second pair of stop elements have a combined thickness that is more than a length of each prong such that the prongs are inhibited from passing completely through the contact pad when the first pair of stop elements contacts the second pair of stop elements.

4. The method of claim 3 wherein the method further comprises injecting epoxy into a cavity a portion of which is defined by at least two of the contact pad, the first of the first pair of stop elements, the first of the second pair of stop elements in contact with the first of the first pair of stop elements and the first side of the readout circuit.

5. The method of claim 4 wherein the injecting step further comprises warming the semiconductor substrate to a predetermined temperature that is less than the melting point of the malleable metallic material of the contact pad.

6. The method of claim 3 wherein the method further comprises injecting epoxy into a cavity a portion of which is defined by at least two of the contact pad, the first of the first pair of stop elements, the first of the second pair of stop elements in contact with the first of the first pair of stop elements and the first side of the readout circuit.

7. The method of claim 1 wherein the method further comprises:

forming a first pair of stop elements over the substrate surface so that the contact pad is disposed between the first pair of stop elements, and

wherein the first side of the readout circuit is moved towards the substrate surface until the first pair of stop elements contacts the first side of the readout circuit, and

wherein each of the first pair of stop elements have a thickness that is more than a length of each prong such that the prongs are inhibited from passing completely through the contact pad when the first pair of stop elements contacts the first side of the readout circuit.

8. The method of claim 1 wherein the malleable metallic material is Indium.

9. The method of claim 1 wherein each prong comprises a conductive material adapted to substantially bond to the malleable metallic material of the contact pad.

10. The method of claim 9 wherein the conductive material comprises Tungsten.