Dielectric composition for thin-film transistors
View Patent ↗An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and a thermal acid generator. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The thermal acid generator allows the dielectric layer to be cured at relatively lower temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.
1. A dielectric composition comprising a dielectric material, a thermal acid generator, an optional crosslinking agent, and an optional solvent;
wherein the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material;
wherein both the lower-k dielectric material and the higher-k dielectric material are miscible in the solvent; and
wherein the lower-k dielectric material is a polyacrylate comprising a silane group, a polyvinyl comprising a silane group, a polyimide comprising a silane group, a polyester comprising a silane group, a polyether comprising a silane group, a polyketone comprising a silane group, or a polysulfone comprising a silane group.
2. The dielectric composition of claim 1 , wherein the dielectric material is an acid-sensitive dielectric material.
3. The dielectric composition of claim 1 , wherein the dielectric composition has a shelf-life greater than 1 month at room temperature.
4. The dielectric composition of claim 1 , wherein the lower-k dielectric material has a dielectric constant of less than 4.0.
5. The dielectric composition of claim 1 , wherein the higher-k dielectric material has a dielectric constant of 4.0 or higher.
6. The dielectric composition of claim 1 ,
wherein the higher-k dielectric material is selected from the group consisting of a polyimide, a polyester, a polyether, a polyacrylate, a polyvinyl, a polyketone, a polysulfone, a molecular glass compound, and combinations thereof.
7. The dielectric composition of claim 1 , wherein the thermal acid generator is a hydrocarbylsulfonic acid blocked or neutralized with amine.
8. The dielectric composition of 1 , wherein the thermal acid generator is a polymeric blocked sulfonic acid ester, an amine neutralized substituted naphthalenesulfonic acid, an amine neutralized substituted benzenesulfonic acid, or an amine neutralized acid phosphate.
9. The dielectric composition of claim 1 , wherein the thermal acid generator is present in the amount of from about 0.001 to about 3 wt % of the dielectric composition.
10. A dielectric composition comprising an acid-sensitive dielectric material, a thermal acid generator, and an optional solvent;
wherein the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material;
wherein both the lower-k dielectric material and the higher-k dielectric material are miscible in the solvent; and
wherein the lower-k dielectric material is a polyacrylate comprising a silane group, a polyvinyl comprising a silane group, a polyimide comprising a silane group, a polyester comprising a silane group, a polyether comprising a silane group, a polyketone comprising a silane group, or a polysulfone comprising a silane group.
11. An electronic device comprising a dielectric layer; wherein the dielectric layer is generated from a composition comprising the dielectric composition of claim 1 .
12. The dielectric composition of claim 1 , wherein the lower-k dielectric material is selected from the group consisting of
wherein x and y are molar fractions.