IP Library Granted Patent US 9,263,482
Granted Patent B2
US 9,263,482 · App. 14/142,646 · Granted Feb 16, 2016

Solid-state image pickup device

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Quick Facts
Patent No.
US 9,263,482
App. No.
14/142,646
Granted
Feb 16, 2016
Kind
B2
Abstract

A solid-state imaging apparatus having a plurality of pixels, comprising: a substrate; a wiring layer formed on the substrate and including an insulating film and a plurality of wires; a plurality of lower electrodes formed on the wiring layer in one-to-one correspondence with the plurality of pixels; a photoelectric conversion film formed covering the plurality of lower electrodes; a light-transmissive upper electrode formed on the photoelectric conversion film; and a shield electrode extending through a gap between each pair of adjacent lower electrodes among the plurality of lower electrodes, the shield electrode having a fixed potential and being electrically insulated from the plurality of lower electrodes.

Claims (43)

1. A solid-state imaging apparatus having a plurality of pixels, comprising:

a substrate;

a wiring layer formed on the substrate and including an insulating film and a plurality of wires;

a plurality of lower electrodes formed on the wiring layer in one-to-one correspondence with the plurality of pixels;

a photoelectric conversion film formed covering the plurality of lower electrodes;

a light-transmissive upper electrode formed on the photoelectric conversion film;

a shield electrode between a pair of adjacent lower electrodes among the plurality of lower electrodes, the shield electrode having a fixed potential and being electrically insulated from the plurality of lower electrodes, and

a shield wire, between a pair of adjacent wires among the plurality of wires, having a fixed potential, being electrically insulated from the plurality of wires, and being electrically connected to the shield electrode.

2. The solid-state imaging apparatus of claim 1 , wherein the shield electrode is made of the same material as that of the plurality of lower electrodes.

3. The solid-state imaging apparatus of claim 1 , wherein the shield wire is made of the same material as that of the plurality of wires.

4. The solid-state imaging apparatus of claim 1 , wherein the potential of the shield electrode is set to an intermediate potential between a potential of the upper electrode and a potential of each of the plurality of lower electrodes.

5. The solid-state imaging apparatus of claim 1 further comprising:

a power wire commonly supplying power to the plurality of pixels,

wherein the shield electrode is electrically coupled to the power wire.

6. The solid-state imaging apparatus of claim 1 , wherein the plurality of lower electrodes are arranged in a matrix two-dimensionally, and the shield electrode between the pair of adjacent lower electrodes is a part of one lattice-patterned shield electrode in a plan view for surrounding the plurality of lower electrodes.

7. A solid-state imaging apparatus having pixels arranged in matrix, comprising:

a substrate;

a wiring layer, on the substrate, including an insulating film and wires;

lower electrodes, in or on the wiring layer, disposed in matrix to correspond to the pixels, respectively;

a photoelectric conversion film covering the lower electrodes;

a light-transmissive upper electrode on the photoelectric conversion film;

shield electrodes each disposed between adjacent two lower electrodes in cross-sectional view so that the lower electrodes and the shield electrodes are disposed alternately, the shield electrodes having a fixed potential and being electrically insulated from any of the lower electrodes; and

shield wires, in the wiring layer and under the respective shied electrodes, electrically connected to the shield electrodes, respectively, in cross-sectional view, each shield wires having a fixed potential and being electrically insulated from any of the wires in the wiring layer.

8. The solid-state imaging apparatus of claim 7 , wherein the shield electrodes are made of the same material as that of the lower electrodes.

9. The solid-state imaging apparatus of claim 7 , wherein the shield wires are made of the same material as that of the wires.

10. The solid-state imaging apparatus of claim 7 , wherein the potential of the shield electrodes are set to an intermediate potential between a potential of the upper electrode and a potential of each of the lower electrodes.

11. The solid-state imaging apparatus of claim 7 , further comprising a power wire commonly supplying power to the pixels, wherein

each shield electrode between immediately adjacent two lower electrodes is electrically coupled to the power wire.

12. The solid-state imaging apparatus of claim 7 , wherein each shield electrode between immediately adjacent two lower electrodes is a part of one lattice-patterned shield electrode in a plan view for surrounding the lower electrodes.

13. A solid-state imaging apparatus having pixels arranged in matrix, comprising:

a substrate;

a wiring layer, on the substrate, including an insulating film and wires;

lower electrodes, in or on the wiring layer, disposed in matrix to correspond to the pixels, respectively, first lower electrodes being disposed along a first row or column of the matrix, second lower electrodes being disposed along a second row or column of the matrix immediately adjacent to, and parallel to, the first row or column;

a photoelectric conversion film covering the lower electrodes;

a light-transmissive upper electrode on the photoelectric conversion film;

a shield electrode disposed between the first row or column of the first lower electrodes and the second row or column of the second lower electrodes, the shield electrode having a fixed potential and being electrically insulated from any of the lower electrodes; and

a shield wire, in the wiring layer and under the shied electrode, electrically connected to the shield electrode, the shield wire having a fixed potential and being electrically insulated from any of the wires in the wiring layer.

14. The solid-state imaging apparatus of claim 13 , wherein the shield electrode is made of the same material as that of the lower electrodes.

15. The solid-state imaging apparatus of claim 13 , wherein the shield wire is made of the same material as that of the wires.

16. The solid-state imaging apparatus of claim 13 , wherein the potential of the shield electrode is set to an intermediate potential between a potential of the upper electrode and a potential of each of the lower electrodes.

17. The solid-state imaging apparatus of claim 13 , further comprising a power wire commonly supplying power to the pixels, wherein

the shield electrode is electrically coupled to the power wire.

18. The solid-state imaging apparatus of claim 13 , wherein the shield electrode is a part of one lattice-patterned shield electrode in a plan view for surrounding the lower electrodes.

Assignments (3)
CORRECTIVE ASSIGNMENT TO CORRECT THE ERRONEOUSLY FILED APPLICATION NUMBERS 13/384239, 13/498734, 14/116681 AND 14/301144 PREVIOUSLY RECORDED ON REEL 034194 FRAME 0143. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Dec 24, 2020
From: PANASONIC CORPORATION
To: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
Reel/Frame 056788/0362 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 10, 2014
From: PANASONIC CORPORATION
To: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
Reel/Frame 034194/0143 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 3, 2014
From: DOI, HIROYUKI; YASUHIRA, MITSUO; MIYAGAWA, RYOHEI; OHMORI, YOSHIYUKI
To: PANASONIC CORPORATION
Reel/Frame 032340/0851 →