Solid-state imaging device
View Patent ↗A solid-state imaging device includes a substrate, a photoelectric conversion section, a first impurity layer having a carrier polarity of a second conductivity type, a charge-to-voltage converting section, an amplifying section, and a second impurity layer having a carrier polarity of the second conductivity type. The second impurity layer is disposed in a region between the photoelectric conversion section and the amplifying section. The second impurity concentration of the second P-type impurity layer is made higher than the first impurity concentration of the first impurity layer.
1. A solid-state imaging device comprising:
a substrate;
a well region disposed on the substrate;
a photoelectric conversion section configured to convert incident light into a signal charge, the photoelectric conversion section being disposed on the well region;
at least one transistor section disposed on the well region;
an isolation region disposed in a region between the photoelectric conversion section and the transistor section; and
an impurity layer located below the isolation region.
2. The solid-state imaging device according to claim 1 , wherein at least the one transistor section is a transfer transistor.
3. The solid-state imaging device according to claim 2 , wherein the transfer transistor configured to transfer the signal charge from the photoelectric conversion section to the charge-to-voltage converting section, the transfer section being disposed in a region between the photoelectric conversion section and the charge-to-voltage converting section.
4. The solid-state imaging device according to claim 1 , wherein at least the one transistor section is an amplifier transistor.
5. The solid-state imaging device according to claim 1 , wherein the isolation layer formed by a technique of one of LOCOS and STI.
6. The solid-state imaging device according to claim 1 , further comprising:
a plurality of the photoelectric conversion sections arranged in a predetermined direction; and
a diffusion isolation layer formed by a technique of diffusion isolation in a region between the photoelectric conversion sections adjacent to each other in the predetermined direction.
7. The solid-state imaging device according to claim 1 , wherein the impurity layer is disposed within the well region.