Substrate processing method and substrate processing apparatus
Scan step (S 3 ) for moving a nozzle with etching liquid discharged therefrom is carried out such that etching liquid application position toward the rotating substrate moves from the edge portion toward the center portion of the principal face of the substrate. Thereafter, center discharging step (S 4 ) for continuing the supply of the etching liquid toward the principal face of the substrate under the condition that the application position is positioned at the center portion of the principal face of the substrate W is conducted. Moving velocity of the liquid application position in the scan step (S 3 ) is determined in accordance with supply condition of the etching liquid toward the substrate under the condition that the liquid application position is positioned at the center portion of the principal face of the substrate.
1. A substrate processing method for processing a substrate comprising:
a scan step of rotating the substrate about a rotational axis passing through a principal face of the substrate and moving a nozzle while discharging an etching liquid therefrom such that a liquid application position of the discharged etching liquid on the substrate is moved from an edge portion of the principal face of the substrate to a center portion of the principal face of the substrate, wherein etching amounts of the substrate are higher at the edge portion than at the center portion of the substrate; and
a center discharging step of rotating the substrate about the rotational axis while continuing the discharge of the etching liquid toward the principal face of the substrate, under the state that the liquid application position has reached the center portion of the principal face of the substrate and the nozzle has stopped moving, such that etching amounts of the substrate are higher at the center portion than at the edge portion of the substrate; and
a scan velocity determining step of determining a moving velocity for the scan step, for moving the liquid application position from the edge portion to the center portion, according to a supply condition of the etching liquid under the state that the liquid application position is fixed at the center portion of the principal face of the substrate,
wherein the supply condition of the etching liquid includes at least one of: etching liquid density, etching liquid temperature, supply time for etching liquid, and etching liquid type.
2. The substrate processing method according to claim 1 , wherein the scan velocity determining step is a step of determining the moving velocity according to a supply time for supplying the etching liquid toward the substrate under the state that the liquid application position is positioned at the center portion of the principal face of the substrate.
3. The substrate processing method according to claim 2 , wherein the scan velocity determining step is a step of determining the moving velocity of the liquid application position according to a table indicating relationship between the supply time of the etching liquid under the state that the liquid application position is positioned at the center portion of the principal face of the substrate and the moving velocity of the liquid application position.
4. The substrate processing method according to claim 2 , wherein the scan velocity determining step is a step of determining the moving velocity of the liquid application position according to a table indicating relationship between the supply time of the etching liquid under the state that the liquid application position is positioned at the center portion of the principal face of the substrate and a moving time of the liquid application position.
5. The substrate processing method according to claim 1 , wherein the scan velocity determining step is a step of determining the moving velocity of the liquid application position for each of a plurality of intervals between the edge portion of the principal face of the substrate and the center portion of the principal face of the substrate.