Light emitting device and method of manufacturing the light emitting device

1. A light emitting device comprising:

a transparent substrate;

a transparent electrode on the transparent substrate, the transparent electrode comprising at least two transparent electrode layers, the at least two transparent electrode layers being successively stacked and having different refractive indices, the refractive index of one of the at least two transparent electrode layers that is closer to the transparent substrate being higher than the refractive index of the other one of the at least two transparent electrode layers, the transparent electrode including a first transparent electrode layer on the transparent substrate and a second transparent electrode layer on the first transparent electrode layer;

a light emission layer on the transparent electrode;

a reflective electrode on the light emission layer; and

multiple nano voids formed on an upper surface of the first transparent electrode layer.

2. The light emitting device of claim 1 , wherein a difference between the refractive indices of the transparent electrode layers is in a range of 0.1 through 1.0.

3. The light emitting device of claim 1 , wherein the at least two transparent electrode layers are formed of a transparent conductive material comprising at least one of tin-doped indium oxide (ITO), zinc-doped indium oxide (IZO), aluminum-doped zinc oxide (AZO) and gallium-doped zinc oxide (GZO).

4. The light emitting device of claim 1 , wherein the first transparent electrode layer is formed of gallium-doped zinc oxide (GZO), and the second transparent electrode layer is formed of tin-doped indium oxide (ITO).

5. A light emitting device comprising:

a transparent substrate;

a transparent electrode on the transparent substrate, the transparent electrode comprising at least two transparent electrode layers, the at least two transparent electrode layers being successively stacked and having different refractive indices, the refractive index of one of the at least two transparent electrode layers that is closer to the transparent substrate being higher than the refractive index of the other one of the at least two transparent electrode layers, the transparent electrode including a first transparent electrode layer on the transparent substrate and a second transparent electrode layer on the first transparent electrode layer;

a light emission layer on the transparent electrode; and

a reflective electrode on the light emission layer;

wherein a thickness of the first transparent electrode layer is in a range of 50 nm through 500 nm, and a thickness of the second transparent electrode layer is in a range of 200 nm through 2 μm.

6. The light emitting device of claim 1 , wherein a size of the multiple nano voids is in a range of 5 nm through 1 μm, and a height of the multiple nano voids is in a range of 5 nm through 10 μm.

7. The light emitting device of claim 1 , wherein the multiple nano voids are filled with at least one of air and a transparent dielectric.

8. A light emitting device comprising:

a transparent substrate;

a transparent electrode on the transparent substrate, the transparent electrode comprising at least two transparent electrode layers, the at least two transparent electrode layers being successively stacked and having different refractive indices, the refractive index of one of the at least two transparent electrode layers that is closer to the transparent substrate being higher than the refractive index of the other one of the at least two transparent electrode layers, the transparent electrode including a first transparent electrode layer on the transparent substrate and a second transparent electrode layer on the first transparent electrode layer;

a light emission layer on the transparent electrode; and

a reflective electrode on the light emission layer;

wherein the transparent electrode further comprises:

a third transparent electrode layer on the second transparent electrode layer, wherein

a refractive index of the first transparent electrode layer is higher than a refractive index of the second transparent electrode layer, and the refractive index of the second transparent electrode layer is higher than a refractive index of the third transparent electrode layer.

9. The light emitting device of claim 8 , further comprising multiple nano voids formed on at least one of an upper surface of the first transparent electrode layer and an upper surface of the second transparent electrode layer.

10. A method of manufacturing a light emitting device, the method comprising:

forming a transparent electrode on a transparent substrate, the transparent electrode comprising at least two transparent electrode layers, the at least two transparent electrode layers being successively stacked and having different refractive indices, the refractive index of one of the at least two transparent electrode layers that is closer to the transparent substrate being higher than the refractive index of the other one of the at least two transparent electrode layers;

forming a light emission layer on the transparent electrode; and

forming a reflective electrode on the light emission layer;

wherein the forming of the transparent electrode comprises:

forming a first transparent electrode layer on the transparent substrate;

forming multiple nano voids on an upper surface of the first transparent electrode layer by using an anodizing scheme; and

forming a second transparent electrode layer on the first transparent electrode layer,

wherein a refractive index of the first transparent electrode layer is higher than a refractive index of the second transparent electrode layer.

11. The method of claim 10 , wherein a difference between the refractive indices of the first transparent electrode layer and the second transparent electrode layer is in a range of 0.1 through 1.0.

12. The method of claim 10 , wherein the first transparent electrode layer and the second transparent electrode layer are formed of a transparent conductive material comprising at least one of tin-doped indium oxide (ITO), zinc-doped indium oxide (IZO), aluminum-doped zinc oxide (AZO) and gallium-doped zinc oxide (GZO).

13. The method of claim 10 , wherein the forming of the multiple nano voids on the upper surface of the first transparent electrode layer by using the anodizing scheme comprises:

attaching the transparent substrate on which the first transparent electrode layer is formed onto an anode;

dipping a cathode and the anode into a solution; and

applying at least one of a direct current and a pulse current to the cathode and the anode.

14. The method of claim 13 , wherein the solution is a neutral solution comprising a halogen component.

15. The method of claim 13 , wherein the solution comprises at least one of C 16 H 36 NClO 4 , NaF, and NH 4 F.

16. The method of claim 10 , wherein the forming of the transparent electrode further comprises:

forming a third transparent electrode layer on the second transparent electrode layer, wherein

the first transparent electrode layer is formed on the transparent substrate and the second transparent electrode is formed on the first transparent electrode layer, and

a refractive index of the second transparent electrode layer is higher than a refractive index of the third transparent electrode layer.

17. The method of claim 16 , wherein the forming of the transparent electrode further comprises:

forming multiple nano voids on an upper surface of the second transparent electrode layer by using an anodizing scheme.