Solar cell and method for manufacturing the same
View Patent ↗A method of manufacturing a solar cell includes forming jagged portions non-uniformly on a surface of a substrate, forming a first type semiconductor and a second type semiconductor in the substrate, forming a first electrode to contact the first type semiconductor, and forming a second electrode to contact the second type semiconductor. An etchant used in a wet etching process in manufacturing the solar cell includes about 0.5 wt % to 10 wt % of HF, about 30 wt % to 60 wt % of HNO 3 , and up to about 30 wt % of acetic acid based on total weight of the etchant.
1. A solar cell, comprising:
a substrate having a first surface on which jagged portions are non-uniformly positioned, the jagged portions having an inclination that is greater than 54.76° and less than 90°, and the substrate having a first type semiconductor and a second type semiconductor;
a first anti-reflective layer on the first surface of the substrate, the first anti-reflective layer having a first refractive index;
a second anti-reflective layer on the first anti-reflective layer, the second anti-reflective layer having a second refractive index different from the first refractive index;
at least one reflective layer positioned on a second surface of the substrate opposite the first surface;
a first electrode to contact the first type semiconductor; and
a second electrode to contact the second type semiconductor through the at least one reflective layer;
wherein the at least one reflective layer includes a first reflective layer having a first refractive index, a second reflective layer having a second refractive index smaller than the first refractive index, and a third reflective layer disposed between the second surface of the substrate and the first reflective layer,
wherein the first reflective layer is disposed closer to the second surface of the substrate than the second reflective layer,
wherein the first reflective layer is disposed between the third reflective layer and the second reflective layer,
wherein the third reflective layer is disposed on the second surface of the substrate, the first reflective layer is disposed on the third reflective layer, and the second reflective layer is disposed on the first reflective layer, and
wherein the first reflective layer is formed of a silicon oxynitride layer, the second reflective layer is formed of a hydrogenated silicon oxide layer and the third reflective layer is formed of a silicon oxide layer.
2. The solar cell of claim 1 , wherein the first refractive index of the first anti-reflective layer is greater than the second refractive index of the second anti-reflective layer.
3. The solar cell of claim 1 , wherein the third reflective layer has a third refractive index greater than the first refractive index of the first anti-reflective layer.
4. A method for manufacturing a solar cell, the method comprising:
forming jagged portions non-uniformly on a first surface of a substrate, wherein the jagged portions have an inclination that is greater than 54.76° and less than 90°;
forming a first type semiconductor and a second type semiconductor in the substrate;
forming a first anti-reflective layer on the first surface of the substrate and a second anti-reflective layer on the first anti-reflective layer, a refractive index of the first anti-reflective layer being different from a refractive index of the second anti-reflective layer;
forming at least one reflective layer on a second surface of the substrate opposite the first surface;
forming a first electrode to contact the first type semiconductor; and
forming a second electrode to contact the second type semiconductor through the at least one reflective layer,
wherein the at least one reflective layer includes a first reflective layer having a first refractive index, a second reflective layer having a second refractive index smaller than the first refractive index, and a third reflective layer disposed between the second surface of the substrate and the first reflective layer,
wherein the first reflective layer is disposed closer to the second surface of the substrate than the second reflective layer,
wherein the first reflective layer is disposed between the third reflective layer and the second reflective layer,
wherein the third reflective layer is disposed on the second surface of the substrate, the first reflective layer is disposed on the third reflective layer, and the second reflective layer is disposed on the first reflective layer, and
wherein the first reflective layer is formed of a silicon oxynitride layer, the second reflective layer is formed of a hydrogenated silicon oxide layer and the third reflective layer is formed of a silicon oxide layer.
5. The method of claim 4 , further comprising, after forming the jagged portions, wet etching the first surface of the substrate.
6. The method of claim 5 , wherein an etchant used in the wet etching contains about 0.5 wt % to 10 wt % of HF, about 30 wt % to 60 wt % of HNO 3 , and up to about 30 wt % of acetic acid based on total weight of the etchant.
7. The method of claim 4 , wherein the forming of the jagged portions includes using plasma ions and/or radicals to texture the surface of the substrate.
8. The method of claim 4 , wherein the third reflective layer has a third refractive index greater than the first refractive index of the first anti-reflective layer.
9. The method of claim 4 , further comprising, before forming the jagged portions, wet etching the substrate.