Semiconductor device and method for manufacturing the same
View Patent ↗A semiconductor device includes an expanded semiconductor chip having a first semiconductor chip and an expanded portion extending outward from a side surface of the first semiconductor chip, a second semiconductor chip provided so as to be connected to the expanded semiconductor chip via a plurality of first bumps, and a base provided so as to be connected to the expanded semiconductor chip via a plurality of second bumps. The first bumps are provided between the first semiconductor chip and the second semiconductor chip. The second bumps are provided between the expanded portion and the base.
1. A semiconductor device, comprising:
an expanded semiconductor chip including a first semiconductor chip and an expanded portion which extends outward from a side surface of the first semiconductor chip;
a second semiconductor chip provided so as to be connected to the expanded semiconductor chip via a plurality of first bumps; and
a base provided so as to be connected to the expanded semiconductor chip via a plurality of second bumps, wherein
the first bumps are formed between the first semiconductor chip and the second semiconductor chip,
the second bumps are formed between a surface of the expanded portion facing the base and a surface of the base facing the expanded portion, and
both of a first surface of each of the second bumps facing the surface of the expanded portion and a second surface of each the second bumps facing the surface of the base have a flat shape.
2. The semiconductor device of claim 1 , wherein
the expanded semiconductor chip has a re-distribution interconnect portion extending from a front surface of the first semiconductor chip to a front surface of the expanded portion.
3. The semiconductor device of claim 2 , wherein
a first electrode pad to be connected to a corresponding one of the first bumps and a second electrode pad to be connected to a corresponding one of the second bumps are formed in the re-distribution interconnect portion, and
the first electrode pad and the second electrode pad are connected to each other via an interconnect formed in the re-distribution interconnect portion.
4. The semiconductor device of claim 3 , wherein
the re-distribution interconnect portion includes a plurality of layers.
5. The semiconductor device of claim 3 , wherein
the second semiconductor chip includes a third electrode pad connected to a corresponding one of the first bumps,
the base includes a fourth electrode pad connected to a corresponding one of the second bumps, and
a sum of thicknesses of the second electrode pad, the corresponding one of the second bumps, and the fourth electrode pad is larger than a sum of thicknesses of the first electrode pad, the corresponding one of the first bumps, the third electrode pad, and the second semiconductor chip.
6. The semiconductor vice of claim 5 , wherein
the thickness of the fourth electrode pad is greater than a difference between a thickness of the second semiconductor chip and a sum of the thickness of the second electrode pad and the thickness of the corresponding one of the second bumps.
7. The semiconductor device of claim 3 , wherein the second electrode pad is thicker than the first electrode pad.
8. The semiconductor device of claim 2 , wherein
the re-distribution interconnect portion is not formed at a connection portion where the first semiconductor chip and the second semiconductor chip are connected to each other via the first bumps, and
the first semiconductor chip and the second semiconductor chip are connected to each other, not via the interconnect formed in the re-distribution interconnect portion.
9. The semiconductor device of claim 2 , wherein
a length of each side of the front surface of the expanded semiconductor chip is longer than a length of each side of a front surface of the second semiconductor chip.
10. The semiconductor device of claim 2 , wherein
the base has a plurality of external terminals on a surface opposite to a surface facing the expanded semiconductor chip, and
a distance between adjacent ones of the second bumps is greater than a distance between adjacent ones of the first bumps, and is smaller than a distance between adjacent ones of the external terminal.
11. The semiconductor device of claim 2 , wherein
the second semiconductor chip is a stacked-type chip including a plurality of semiconductor chips stacked one another, and the stacked semiconductor chips are connected with one another by a through electrode.
12. The semiconductor device of claim 1 , wherein
a length of each side of the front surface of the expanded semiconductor chip is longer than a length of each side of a front surface of the second semiconductor chip.
13. The semiconductor device of claim 1 , wherein
the expanded portion is made of a resin material covering the side surface of the first semiconductor chip.
14. The semiconductor device of claim 1 , wherein
the base has a plurality of external terminals on a surface opposite to a surface facing the expanded semiconductor chip, and
a distance between adjacent ones of the second bumps is greater than a distance between adjacent ones of the first bumps, and is smaller than a distance between adjacent ones of the external terminals.
15. The semiconductor device of claim 1 , wherein
a groove is formed in a region of the base where the second semiconductor chip overlaps, in a surface facing the second semiconductor chip.
16. The semiconductor device of claim 1 , wherein
the second semiconductor chip is a stacked-type semiconductor chip including a plurality of semiconductor chips stacked one another, and the stacked semiconductor chips are connected with one another by a through electrode.
17. The semiconductor device of claim 1 , wherein the second bumps are disposed under the expanded portion.