IP Library Granted Patent US 9,490,224
Granted Patent B2
US 9,490,224 · App. 14/150,153 · Granted Nov 8, 2016

Semiconductor device and manufacturing method thereof

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Quick Facts
Patent No.
US 9,490,224
App. No.
14/150,153
Granted
Nov 8, 2016
Kind
B2
Abstract

A resin sealed semiconductor device includes a semiconductor element having a plurality of metal plated plastic particle core or metal particle core micro-balls including an internal terminal surface and an external connection electrode. Metal wires electrically connect the semiconductor element to the internal terminal and are bonded to the internal terminal surface by a wire bond connection coupling the metal wire to the metal plating, where the metal wire and the metal plating are different materials. A sealing body seals the semiconductor element, a part of each the plurality of the terminals, and the metal wires, where a back surface of the semiconductor element is exposed by the sealing body, and a part of each the plurality of micro-balls project from a bottom surface of the sealing body to provide the external connection electrodes.

Claims (23)

1. A resin sealed semiconductor device comprising:

a semiconductor element;

a plurality of micro-balls independently arrayed and having a predetermined pitch in a periphery of the semiconductor element,

wherein the micro-balls each comprise a plastic particle core or metal particle core completely covered by a metal plating defining a spherical perimeter surface thereof;

a metal wire electrically connecting the semiconductor element to an internal terminal surface comprising a first portion of the spherical perimeter surface of the metal plating of each of the plurality of micro-balls,

wherein the metal wire is bonded to the internal terminal surface by a wire bond connection coupling the metal wire to the metal plating on the spherical perimeter surface; and

a sealing body that seals the semiconductor element, a substantial portion of each of the plurality of micro-balls, and the metal wire with a sealing resin,

wherein a back surface of the semiconductor element is exposed by the sealing body, and a second portion of the metal plating of each of the plurality of micro-balls is exposed only at a bottom surface of the sealing body and a portion of the spherical perimeter surface projects from the bottom surface to provide an external connection electrode, and

wherein the back surface of the semiconductor element and the lowermost contact portion of the spherical perimeter surface of the plurality of micro-balls are exposed and on a same horizontal plane with the bottom surface of the sealing body.

2. A resin sealed semiconductor device according to claim 1 , wherein the back surface of the semiconductor element is exposed and is level with the bottom surface of the sealing body.

3. A resin sealed semiconductor device according to claim 1 , wherein the plurality of micro-balls comprise a plastic core, and the metal plating is selected from the group consisting of gold plating, silver plating, aluminum plating, or nickel plating, and the metal plating comprises one of a single composition or a multi-layer composition.

4. A resin sealed semiconductor device according to claim 1 , wherein the plurality of micro-balls comprise a metal core selected from the group consisting of copper or nickel, and the metal plating comprises gold plating, silver plating, aluminum plating, or nickel plating, and the metal plating comprises one of a single composition or a multi-layer composition.

5. A resin sealed semiconductor device according to claim 1 , wherein the wire comprises one of gold, copper, or aluminum wire.

6. A resin sealed semiconductor device according to claim 1 , wherein the bottom surface of the sealing body extends in a lateral direction and includes first and second portions connected by a vertical surface and the semiconductor element is exposed at the first portion and the spherical perimeter surface of the plurality of micro-balls are exposed at the second portion.

7. A resin sealed semiconductor device comprising:

a semiconductor element;

a plurality of micro-balls independently arrayed and having a predetermined pitch in a periphery of the semiconductor element,

wherein the micro-balls each comprise a plastic particle core or metal particle core completely covered by a metal plating defining a spherical perimeter surface thereof;

a metal wire electrically connecting the semiconductor element to an internal terminal surface comprising a first portion of the spherical perimeter surface of the metal plating of each of the plurality of micro-balls,

wherein the metal wire is bonded to the internal terminal surface by a wire bond connection coupling the metal wire to the metal plating on the spherical perimeter surface; and

a sealing body for sealing the semiconductor element, a region of each of the plurality of micro-balls, and the metal wire with a sealing resin,

wherein a back surface of the semiconductor element is exposed by the sealing body, and a second portion of the metal plating of each of the plurality of micro-balls is exposed at a bottom surface of the sealing body and a portion of the spherical perimeter surface projects from the bottom surface to provide an external connection electrode, and,

wherein the plurality of micro-balls are exposed from an upper surface and the bottom surface of the sealing body.

Assignments (4)
CHANGE OF ADDRESS Recorded Jun 8, 2023
From: ABLIC INC.
To: ABLIC INC.
Reel/Frame 064021/0575 →
CHANGE OF NAME Recorded Mar 12, 2018
From: SII SEMICONDUCTOR CORPORATION
To: ABLIC INC.
Reel/Frame 045567/0927 →
CORRECTIVE ASSIGNMENT TO CORRECT THE EXECUTION DATE PREVIOUSLY RECORDED AT REEL: 037783 FRAME: 0166. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Feb 23, 2016
From: SEIKO INSTRUMENTS INC
To: SII SEMICONDUCTOR CORPORATION
Reel/Frame 037903/0928 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 11, 2016
From: SEIKO INSTRUMENTS INC
To: SII SEMICONDUCTOR CORPORATION .
Reel/Frame 037783/0166 →