Semiconductor light emitting device
This invention discloses a light emitting semiconductor device including a light-emitting structure and an external optical element. The optical element couples to the light-emitting structure circumferentially. In addition, the refractive index of the external optical element is greater than or about the same as that of a transparent substrate of the light-emitting structure, or in-between that of the transparent substrate and the encapsulant material.
1. A semiconductor device, comprising:
a light-emitting structure having side surfaces, a top surface, and a bottom surface;
an optical element optically coupled to one of the side surfaces, and exposing the top surface, surrounding the light-emitting structure, and exposing the top surface or the bottom surface, or both thereof;
a metal an insulated reflective layer under the bottom surface; and
a first lead penetrating through and directly connected to the metal insulated reflective layer.
2. The semiconductor device of claim 1 , wherein the first lead has one end near the light-emitting structure a first end exposed to a top surface of the insulated reflective layer and another one a second end distant from the light-emitting structure located under the insulated reflective layer.
3. The semiconductor device of claim 1 , wherein the optical element surrounds the side surfaces of the light-emitting structure.
4. The semiconductor device of claim 1 , further comprising a second lead; wherein the first lead and the second lead are arranged on one or two sides of the side surfaces reflective layer formed on the top surface.
5. The semiconductor device of claim 1 , further comprising two pads formed on the same side of the light-emitting structure.
6. The semiconductor device of claim 1 , further comprising two pads formed on a diagonal the top surface of the light-emitting structure, wherein the two pads are formed on a diagonal of the light-emitting structure in a top view.
7. The semiconductor device of claim 1 , further comprising a heat dissipation material under the light-emitting structure.
8. A semiconductor device, comprising:
a light-emitting structure having outer surfaces a top surface;
an optical element optically coupled to one or more of the outer surfaces and exposing another one of the outer surfaces surrounding the light-emitting structure;
a metal an insulated reflective layer under the light-emitting structure; and
a first lead being far from the light-emitting structure and, penetrating through the metal insulated reflective layer, and directly connected to the insulated reflective layer.
9. The semiconductor device of claim 8 , wherein the first lead has a first end near the light-emitting structure exposed to a top surface of the insulated reflective layer and a second end distant from the light-emitting structure located under the insulated reflective layer.
10. The semiconductor device of claim 8 , further comprising a second lead;
wherein the first lead and the second lead are arranged on one or two sides of the light-emitting structure.
11. The semiconductor device of claim 8 , further comprising two pads formed on the same side of the light-emitting structure.
12. The semiconductor device of claim 8 , further comprising two pads formed on the top surface, wherein the two pads are formed on a diagonal of the light-emitting structure in a top view.
13. The semiconductor device of claim 8 , further comprising a submount under the metal insulated reflective layer.
14. The semiconductor device of claim 8 , further comprising a heat dissipation material under the light-emitting structure.
15. The semiconductor device of claim 8 , further comprising a reflective structure formed on one or more of the outer surfaces which are not coupled to the optical element layer formed on the top surface.
16. A semiconductor device, comprising:
a light-emitting structure having outer surfaces a first top surface;
an optical element optically coupled to one or more of the outer surfaces and exposing another one of the outer surfaces surrounding the light-emitting structure;
a metal an insulated reflective layer under the light-emitting structure and having a second top surface;
a submount under the metal insulated reflective layer; and
a lead having a first end and, a second end and a surface directly connected to the insulated reflective layer, and passing penetrating through the metal insulated reflective layer and the submount to expose the first end to the second top surface and the second end under the insulated reflective layer.
17. The semiconductor device of claim 16 , wherein the first end is near the light-emitting structure and the second end is distant from the light-emitting structure have different widths in a cross-sectional view.
18. The semiconductor device of claim 16 , wherein the lead penetrates the metal layer further comprising a reflective structure formed between the first end and the light-emitting structure.
19. The semiconductor device of claim 16 , further comprising a heat dissipation material under the light-emitting structure.
20. The semiconductor device of claim 16 , further comprising a reflective structure formed on one or more of the outer surfaces not coupled to the optical element layer formed on the first top surface.
21. The semiconductor device of claim 1, wherein the first lead comprises a portion extending in a direction away from the light-emitting structure, under the insulated reflective layer.
22. The semiconductor device of claim 8, wherein the first lead comprises a portion under the insulated reflective layer.