IP Library Granted Patent US 9,328,287
Granted Patent B2
US 9,328,287 · App. 14/153,290 · Granted May 3, 2016

Passivation of metal halide scintillators

Inventors: A. Andrew Carey (Lenoir City, TN); Peter Carl Cohen (Knoxville, TN); Mark S. Andreaco (Knoxville, TN)
Assignee: Siemens Medical Solutions USA, Inc.
C09K11/7772C09K11/7704C09K11/7719C09K11/7733
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Quick Facts
Patent No.
US 9,328,287
App. No.
14/153,290
Granted
May 3, 2016
Kind
B2
Abstract

A halide material, such as scintillator crystals of LaBr 3 :Ce and SrI 2 :Eu, with a passivation surface layer is disclosed. The surface layer comprises one or more halides of lower water solubility than the scintillator crystal that the surface layer covers. A method for making such a material is also disclosed. In certain aspects of the disclosure, a passivation layer is formed on a surface of a halide material such as a scintillator crystal of LaBr 3 :Ce of SrI 2 :Eu by fluorinating the surface with a fluorinating agent, such as F 2 for LaBr 3 :Ce and HF for SrI 2 :Eu.

Claims (10)

1. A material, comprising:

a crystal of a first metal halide; where the first metal halide is a scintillator material; wherein the first metal halide comprises LaBr 3 :Ce; and

a surface layer on the first metal halide crystal comprising a second metal halide having a lower water solubility than the first metal halide; wherein the second metal halide comprises one or more of LaFBr 2 , LaF 2 Br and LaF 3 .

2. The material of claim 1 , wherein the surface layer is formed by fluorinating a surface of the crystal of the first metal halide with a fluorinating agent.

3. The material of claim 2 , wherein the fluorinating agent comprises one of more of F 2 , BF 3 , HF, PF 5 , SbF 5 , SF 4 , NF 3 , SiF 4 , WF 6 , interhalogen fluoride gases and xenon fluorides.

4. A method of making a material, comprising forming, on a surface of a crystal of a first metal halide, a layer of a second metal halide having a lower water solubility than the first metal halide; where the first metal halide is a scintillator material; wherein the first metal halide comprises LaBr 3 :Ce; and wherein the second metal halide comprises one or more of LaFBr 2 , LaF 2 Br and LaF 3 .

5. The method of claim 4 , wherein forming the layer comprises fluorinating the surface of the crystal of the first metal halide with one or more of F 2 , BF 3 , HF, PF 5 , SbF 5 , SF 4 , NF 3 , SiF 4 , WF 6 , interhalogen fluoride gases and xenon fluorides.

6. A material, comprising:

a crystal of a first metal halide; where the first metal halide is a scintillator material that comprises SrI 2 :Eu; and wherein a surface layer is formed by fluorinating a surface of the scintillator material that comprises SrI 2 :Eu with HF.

7. A method of making a material, comprising forming, on a surface of a crystal of a first metal halide, a layer of a second metal halide having a lower water solubility than the first metal halide; where the first metal halide is a scintillator material that comprises SrI 2 :Eu; and where the second metal halide is obtained by fluorinating a surface of the scintillator material that comprises SrI 2 :Eu with HF.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 13, 2014
From: CAREY, A. ANDREW; COHEN, PETER CARL; ANDREACO, MARK S.
To: SIEMENS MEDICAL SOLUTIONS USA, INC.
Reel/Frame 031949/0678 →
Continuity (2)
Provisional Application 61754737 · Jan 21, 2013
Related Publication 20140203210A1 · Jul 24, 2014