Light emitting device

1. A light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer;

a first electrode electrically connected to the first conductive semiconductor layer and provided under the light emitting structure;

a second electrode electrically connected to the second conductive semiconductor layer and provided under the light emitting structure;

a first contact portion provided through the light emitting structure and including a first region electrically connected to the first electrode and a second region that makes contact with a top surface of the first conductive semiconductor layer; and

an insulating ion implantation layer provided around the first contact portion to insulate the first contact portion from the second conductive semiconductor layer, wherein the first contact portion includes a conductive ion implantation layer.

2. The light emitting device of claim 1 , further including a second contact portion spaced apart from the light emitting structure and electrically connected to the second electrode.

3. The light emitting device of claim 1 , wherein the first contact portion is provided through the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer.

4. The light emitting device of claim 1 , wherein a bottom surface of the first contact portion is arranged on a same plane with a bottom surface of the second conductive semiconductor layer.

5. The light emitting device of claim 1 , wherein a bottom surface of the first electrode is provided lower than a bottom surface of the second electrode.

6. The light emitting device of claim 1 , wherein the second electrode includes an ohmic contact layer and a reflective layer.

7. The light emitting device of claim 1 , wherein the insulating ion implantation layer is provided between the active layer and the first contact portion.

8. The light emitting device of claim 1 , wherein the insulating ion implantation layer is provided through the active layer and the second conductive semiconductor layer.

9. The light emitting device of claim 1 , wherein a top surface of the first electrode is arranged on a same plane with a top surface of the second electrode.

10. The light emitting device of claim 1 , further including a channel layer exposed at a lower peripheral portion of the light emitting structure and that makes contact with a bottom surface of the second conductive semiconductor layer.

11. The light emitting device of claim 1 , wherein the insulating ion implantation layer is formed by implanting at least one of an N ion, an O ion, or an Ar ion.

12. The light emitting device of claim 1 , further including an insulating layer between the first electrode and second electrode.

13. The light emitting device of claim 12 , wherein a top surface of the insulating layer makes contact with a bottom surface of the insulating ion implantation layer.

14. The light emitting device of claim 1 , wherein the conductive ion implantation layer is formed by implanting at least one of a Ti ion, an Al ion, or an Au ion.

15. The light emitting device of claim 1 , wherein the first contact portion provided in the light emitting structure has a width in a range of 3 μm to 5 μm.

16. A light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;

a first electrode electrically connected to the first conductive semiconductor layer and provided under the light emitting structure;

a second electrode electrically connected to the second conductive semiconductor layer and provided under the light emitting structure;

a plurality of first contact portions provided through the light emitting structure and including a first region electrically connected to the first electrode and a second region that makes contact with a top surface of the first conductive semiconductor layer; and

an insulating ion implantation layer provided around the first contact portion to insulate the first contact portion from the second conductive semiconductor layer, wherein the first contact portions are spaced apart from each other and provided on the top surface of the first conductive semiconductor layer, and wherein each of the first contact portions includes a conductive ion implantation layer.

17. The light emitting device of claim 16 , further including a second contact portion spaced apart from the light emitting structure and electrically connected to the second electrode.

18. The light emitting device of claim 16 , wherein the first contact portions are provided through the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer.

19. A light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;

a first electrode electrically connected to the first conductive semiconductor layer and provided under the light emitting structure;

a second electrode electrically connected to the second conductive semiconductor layer and provided under the light emitting structure;

a plurality of first contact portions provided through the light emitting structure and including a first region electrically connected to the first electrode and a second region that makes contact with a top surface of the first conductive semiconductor layer; and

an insulating ion implantation layer provided around the first contact portion to insulate the first contact portion from the second conductive semiconductor layer, wherein the insulating ion implantation layer is provided through the active layer and the second conductive semiconductor layer, wherein each of the first contact portions includes a conductive ion implantation layer, and wherein the plurality of first contact portions have widths in a range of about 3 μm to about 5 μm.