Module fabrication of solar cells with low resistivity electrodes
One embodiment of the present invention provides a solar module. The solar module includes a front-side cover, a back-side cover, and a plurality of solar cells situated between the front- and back-side covers. A respective solar cell includes a multi-layer semiconductor structure, a front-side electrode situated above the multi-layer semiconductor structure, and a back-side electrode situated below the multi-layer semiconductor structure. Each of the front-side and the back-side electrodes comprises a metal grid. A respective metal grid comprises a plurality of finger lines and a single busbar coupled to the finger lines. The single busbar is configured to collect current from the finger lines.
1. A bifacial solar cell, comprising:
a multi-layer semiconductor structure;
a front-side electrode positioned on a front side of the multi-layer semiconductor structure; and
a back-side electrode positioned on a back side of the multi-layer semiconductor structure, wherein the front-side and the back-side electrodes each consist of a single busbar, and wherein the front-side busbar and back-side busbar are positioned near opposite edges of the solar cell.
2. The solar cell of claim 1 , wherein the multi-layer semiconductor structure comprises:
a base layer;
a front- or back-side emitter; and
a back or front surface field layer.
3. The solar cell of claim 2 , wherein the multi-layer semiconductor structure further comprises a quantum tunneling barrier (QTB) layer positioned at both front and back sides of the base layer.
4. The solar cell of claim 1 , wherein a respective busbar comprises at least an electroplated Cu layer.
5. The solar cell of claim 1 , wherein a width of the single busbar is between 0.5 and 3 mm.
6. A bifacial solar module, comprising:
a transparent front-side cover;
a transparent back-side cover; and
a plurality of solar cells laminated between the front- and back-side covers, wherein a respective solar cell comprises:
a multi-layer semiconductor structure;
a front-side electrode positioned on a front side of the multi-layer semiconductor structure; and
a back-side electrode positioned on a back side of the multi-layer semiconductor structure, wherein the front-side and the back-side electrodes each consist of a single busbar, and wherein the front-side busbar and back-side busbar are positioned near opposite edges of the solar cell.
7. The solar module of claim 6 , wherein two adjacent solar cells are coupled together by electrically connecting the busbar on a back surface of one of the two adjacent solar cells with the busbar on a front surface of the other one of the two adjacent solar cells.
8. The solar module of claim 6 , wherein two adjacent solar cells are coupled together by electrically connecting a first single busbar at an edge of a solar cell and a second single busbar at an adjacent edge of the adjacent solar cell.
9. The solar module of claim 8 , wherein a width of the electrical connection is substantially similar to a length of the first single busbar.
10. The solar module of claim 6 , wherein the multi-layer semiconductor structure comprises:
a base layer;
a front- or back-side emitter; and
a back or front surface field layer.
11. The solar module of claim 10 , wherein the multi-layer semiconductor structure comprises a quantum tunneling barrier (QTB) layer situated at both front and back sides of the base layer.
12. The solar module of claim 6 , wherein a respective busbar comprises at least an electroplated Cu layer.
13. The solar module of claim 6 , wherein a width of the single busbar is between 0.5 and 3 mm.
14. The solar module of claim 6 , further comprising a plurality of maximum power point tracking (MPPT) devices, wherein a respective MPPT device is coupled to an individual solar cell, thereby facilitating cell-level MPPT.