Light-emitting device having a reflective structure and a metal mesa and the manufacturing method thereof
View Patent ↗A manufacturing method of a light-emitting device is disclosed. The method provides for patterning a semiconductor stack on a first substrate in order to form multiple light-emitting mesas. A second substrate is then bonded to the multiple light-emitting mesas and a reflective structure is formed on the first substrate. A metal layer is then applied on the reflective structure and the metal layer is patterned to form multiple metal mesas corresponding to the multiple light-emitting mesas, with a portion of the reflective structure being exposed.
1. A manufacturing method of a light-emitting device, comprising:
providing a first substrate;
forming a semiconductor stack on the first substrate;
patterning the semiconductor stack to form multiple light-emitting mesas;
bonding a second substrate to the multiple light-emitting mesas;
forming a reflective structure on the rear surface of the first substrate;
applying a metal layer on the reflective structure; and
patterning the metal layer to form multiple metal mesas corresponding to the multiple light-emitting mesas and exposing a portion of the reflective structure.
2. The manufacturing method of claim 1 , further comprising forming a pair of electrodes on each light-emitting mesa before bonding the second substrate to the multiple light-emitting mesas.
3. The manufacturing method of claim 2 , wherein a surface area of one of the metal mesas is larger than the total area of the pair of the electrodes.
4. The manufacturing method of claim 1 , further comprising removing the second substrate; and attaching an adhesive substrate on the multiple metal mesas after removing the second substrate.
5. The manufacturing method of claim 4 , further comprising separating the multiple light-emitting mesas into multiple light-emitting dies by dividing the first substrate and the reflective structure along predetermined scribe lines after removing the second substrate.
6. The manufacturing method of claim 5 , wherein a surface area of the reflective structure on each of the light-emitting mesas is 90% above that of the first substrate on each of the light-emitting mesas after separating the multiple light-emitting mesas into multiple light-emitting dies.
7. The manufacturing method of claim 5 , wherein a surface area of the reflective structure of the light-emitting mesa is larger than that of the metal mesa.
8. The manufacturing method of claim 5 , wherein the light-emitting die comprises a light-emitting diode.
9. The manufacturing method of claim 5 , wherein the step of separating the multiple light-emitting mesas comprises laser scribing, blade sawing, or the combination thereof.
10. The manufacturing method of claim 1 , wherein the multiple metal mesas are separated from each other by a space larger than a space between adjacent two light-emitting mesas.
11. The manufacturing method of claim 1 , wherein the step of applying the second substrate to the semiconductor stack comprises providing an adhesive material; and bonding the second substrate to the multiple light-emitting mesas by the adhesive material.
12. The manufacturing method of claim 11 , wherein the step of removing the second substrate comprises performing a thermal treatment under a treatment temperature above 150° C. to weaken a bonding force between the second substrate and the adhesive material.
13. The manufacturing method of claim 12 , wherein the bonding force is larger than 0.2 N/mm before the thermal treatment and smaller than 0.02 N/mm after the thermal treatment.
14. The manufacturing method of claim 1 , wherein the reflective structure comprises a reflective portion, and a barrier portion formed between the metal mesa and the reflective portion.
15. The manufacturing method of claim 1 , wherein the metal layer is formed on the reflective portion by a physical deposition process or a chemical deposition process.
16. The manufacturing method of claim 1 , wherein the metal mesa comprises an alloy containing a transition metal and a group WA element.
17. The manufacturing method of claim 1 , wherein the metal mesa comprises gold, tin, or the combination thereof.
18. The manufacturing method of claim 1 , wherein a melting point of the metal mesa is below 350° C.
19. The manufacturing method of claim 1 , wherein the first substrate comprises an insulative material.
20. The manufacturing method of claim 1 , further comprising growing the semiconductor stack on a growth substrate; removing the growth substrate after forming the semiconductor stack on the first substrate; and polishing the first substrate to 60 μm to 150 μm in thickness after removing the growth substrate.