Capacitance coupling parameter estimation in flash memories
View Patent ↗A method for capacitance coupling parameter estimation is disclosed. Step (A) of the method determines a plurality of voltages in a plurality of memory cells of a nonvolatile memory in response to a plurality of writes to the memory cells. The voltages are determined in each of a plurality of cases related to inter-cell interference. Step (B) generates a system of equations of a capacitance coupling model in response to the voltages from all of the cases. Step (C) generates one or more parameters in response to the system of equations. The parameters include one or more couplings between a perturbed memory cell and a plurality of neighboring memory cells adjacent to the perturbed memory cell.
1. A method for capacitance coupling noise accommodation, comprising the steps of:
determining a plurality of mean voltages among a plurality of memory cells of a memory in response to a plurality of writes to the memory cells and a plurality of reads from the memory cells by a control circuit, wherein the mean voltages are determined in each of a plurality of cases related to inter-cell interference;
generating a plurality of parameters in response to the mean voltages, wherein the parameters comprise a plurality of middle state mean voltages and one or more couplings between a plurality of perturbed memory cells and a plurality of neighboring memory cells adjacent to the perturbed memory cells; and
adjusting one or more threshold voltages used to read from the memory based on the middle state mean voltages to operate independently of knowledge of middle state distributions in the memory cells.
2. The method according to claim 1 , wherein
the memory is a flash memory configured to store at least two bits in each of the memory cells,
one of the parameters represents a horizontal capacitance coupling between the perturbed memory cells and the neighboring memory cells, and
another of the parameters is a vertical capacitance coupling between the perturbed memory cells and the neighboring memory cells.
3. The method according to claim 1 , wherein the cases include
a final voltage case,
a no inter-cell interference case,
a vertical capacitance coupling case, and
a horizontal capacitance coupling case.
4. The method according to claim 1 , wherein the middle state mean voltages comprise the mean voltage of the perturbed memory cells in an erased state.
5. The method according to claim 1 , wherein the middle state mean voltages comprise the mean voltage of the perturbed memory cells after programming a lower page and before programming an upper page in the perturbed memory cells.
6. The method according to claim 1 , wherein the mean voltages are determined by writing random data to the memory cells and reading the random data from the memory cells.
7. The method according to claim 1 , wherein the parameters are determined by performing a least mean squares estimation on a matrix comprising the mean voltages.
8. The method according to claim 1 , further comprising the step of:
weighting the matrix to mitigate inaccurate measurements of the mean voltages.
9. The method according to claim 1 , wherein the steps are implemented in a solid-state drive.
10. An apparatus comprising:
an interface configured to process a plurality of read/write operations to/from a memory; and
a control circuit configured to
determine a plurality of mean voltages among a plurality of memory cells of the memory in response to a plurality of writes to the memory cells and a plurality of reads from the memory cells, wherein the mean voltages are determined in each of a plurality of cases related to inter-cell interference,
generate a plurality of parameters in response to the mean voltages, wherein the parameters comprise a plurality of middle state mean voltages and one or more couplings between a plurality of perturbed memory cells and a plurality of neighboring memory cells adjacent to the perturbed memory cells, and
adjust one or more threshold voltages used to read from the memory based on the middle state mean voltages to operate independently of knowledge of middle state distributions in the memory cells.
11. The apparatus according to claim 10 , wherein
the memory is a flash memory configured to store at least two bits in each of the memory cells,
one of the parameters is a horizontal capacitance coupling between the perturbed memory cells and the neighboring memory cells, and
another of the parameters is a vertical capacitance coupling between the perturbed memory cells and the neighboring memory cells.
12. The apparatus according to claim 10 , wherein the cases include
a final voltage case,
a no inter-cell interference case,
a vertical capacitance coupling case, and
a horizontal capacitance coupling case.
13. The apparatus according to claim 10 , wherein the middle state mean voltages comprise the mean voltage of the perturbed memory cells in an erased state.
14. The apparatus according to claim 10 , wherein the middle state mean voltages comprise the mean voltage of the perturbed memory cells after programming a lower page and before programming an upper page in the perturbed memory cells.
15. The apparatus according to claim 10 , wherein the mean voltages are determined by writing random data to the memory cells and reading the random data from the memory cells.
16. The apparatus according to claim 10 , wherein the parameters are determined by performing a least mean squares estimation on a matrix comprising the mean voltages.
17. The apparatus according to claim 10 , wherein the parameters are determined under one or more conditions of
the memory is off-line and the parameters are estimated by the control circuit, and
the memory is on-line and the parameters are updated a plurality of times by the control circuit.
18. The apparatus according to claim 10 , wherein the interface and the control circuit are implemented as part of a solid-state drive.
19. An apparatus comprising:
a memory configured to store data; and
a controller configured to
determine a plurality of mean voltages among a plurality of memory cells of the memory in response to a plurality of writes to the memory cells and a plurality of reads from the memory cells, wherein the mean voltages are determined in each of a plurality of cases related to inter-cell interference,
generate a plurality of parameters in response to the mean voltages, wherein the parameters comprise a plurality of middle state mean voltages and one or more couplings between a plurality of perturbed memory cells and a plurality of neighboring memory cells adjacent to the perturbed memory cells, and
adjust one or more threshold voltages used to read from the memory based on the middle state mean voltages to operate independently of knowledge of middle state distributions in the memory cells.
20. The apparatus according to claim 19 , wherein the memory and the controller are implemented as part of a solid-state drive.