Solid-state imaging apparatus and method for manufacturing same
View Patent ↗An insulating layer is layered above a substrate, and a plurality of pixel electrodes are formed above the insulating layer in a matrix with intervals therebetween. A photoelectric conversion layer and an opposing electrode are formed in respective order above the pixel electrodes. A dummy layer is formed above the insulating layer in a region that in plan-view is more peripheral than a pixel region in which the pixel electrodes are formed. The dummy layer is formed from the same material as the pixel electrodes. The dummy layer is composed of a plurality of dummy layer portions that are each equal to each of the pixel electrodes in terms of size in plan-view. The dummy layer functions as a support layer for planarization during polishing by chemical mechanical polishing.
1. A solid-state imaging apparatus comprising:
a substrate;
an insulating layer above the substrate;
a plurality of first electrodes in a pixel region above the insulating layer, the plurality of first electrode being arranged in a two dimensional array with intervals therebetween;
a second electrode covering the first electrodes in plan-view;
a photoelectric conversion layer between the second electrode and the first electrodes;
a planarization support layer above the insulating layer, the planarization support layer being in a peripheral region of the pixel region; and
a connecting electrode in a peripheral region of the planarization support layer in plan-view, the connecting electrode being configured to apply an electrical voltage to the second electrode, wherein
the planarization support layer and the first electrodes are at a same layer level above the insulating layer,
the planarization support layer is composed of a plurality of planarization support layer portions that are arranged above the insulating layer with intervals therebetween,
each of the planarization support layer portions is equal to each of the first electrodes in terms of shape and size, and
the intervals between the planarization support layer portions are equal to the intervals between the first electrodes.
2. The solid-state imaging apparatus of claim 1 , wherein the planarization support layer portions are arranged to surround an entire periphery of the pixel region.
3. The solid-state imaging apparatus of claim 1 , wherein the planarization support layer portions are arranged to at least triply surround an entire periphery of the pixel region.
4. The solid-state imaging apparatus of claim 1 , wherein
the insulating layer extends into an interval between each two of the first electrodes which are adjacent to one another, the insulating layer extending to a position that is higher than lower surfaces of the two first electrodes and lower than upper surfaces of the two first electrodes.
5. The solid-state imaging apparatus of claim 1 , further comprising a peripheral circuit in a peripheral region of the pixel region, wherein
the planarization support layer is a light-blocking layer and covers the peripheral circuit in plan-view.
6. The solid-state imaging apparatus of claim 5 , wherein the peripheral circuit is a vertical driver.
7. The solid-state imaging apparatus of claim 5 , wherein the peripheral circuit is a horizontal driver.
8. The solid-state imaging apparatus of claim 1 , wherein the planarization support layer is not electrically connected to the first electrodes, the second electrode, or the photoelectric conversion layer.
9. The solid-state imaging apparatus of claim 1 , wherein
each of the first electrodes includes at least one selected from the group consisting of TiN, Ti, Al, Ta, TaN, Cu and W.
10. The solid-state imaging apparatus of claim 1 , further comprising a plurality of readout circuits configured to readout an electrical charge signal generated in the photoelectric conversion layer, the readout circuits being in at least one of the substrate and the insulating layer in one-to-one correspondence with the first electrodes, wherein
each of the first electrodes is electrically connected to a corresponding one of the readout circuits.
11. A solid-state imaging apparatus comprising:
a substrate;
an insulating layer above the substrate;
a plurality of first electrodes in a pixel region above the insulating layer, the plurality of first electrode being arranged in a two dimensional array with intervals therebetween;
a second electrode covering the first electrodes in plan-view;
a photoelectric conversion layer between the second electrode and the first electrodes;
a planarization support layer above the insulating layer, the planarization support layer being in a peripheral region of the pixel region; and
a connecting electrode in a peripheral region of the planarization support layer in plan-view, the connecting electrode being configured to apply an electrical voltage to the second electrode, wherein
the planarization support layer and the first electrodes are at a same layer level above the insulating layer, and
the planarization support layer and the first electrodes are made from similar metal materials.
12. A solid-state imaging apparatus comprising:
a substrate;
an insulating layer above the substrate;
a plurality of first electrodes in a pixel region above the insulating layer, the plurality of first electrode being arranged in a two dimensional array with intervals therebetween;
a second electrode covering the first electrodes in plan-view;
a photoelectric conversion layer between the second electrode and the first electrodes;
a planarization support layer above the insulating layer, the planarization support layer being in a peripheral region of the pixel region; and
a connecting electrode in a peripheral region of the planarization support layer in plan-view, the connecting electrode being configured to apply an electrical voltage to the second electrode, wherein
the planarization support layer and the first electrodes are at a same layer level above the insulating layer, and
the planarization support layer is made from a metal material including at least one selected from the group consisting of Cu, Al, Ti, Ta and W.