IP Library Granted Patent US 9,395,318
Granted Patent B2
US 9,395,318 · App. 14/159,036 · Granted Jul 19, 2016

Electrochemical sensor device

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Quick Facts
Patent No.
US 9,395,318
App. No.
14/159,036
Granted
Jul 19, 2016
Kind
B2
Abstract

There is disclosed an electrochemical sensor device comprising: an integrated electrochemical sensor element having: a substrate; first and second electrodes formed on the upper surface of the substrate; and an electrolyte layer formed on the first and second electrodes so as to electrically contact both the first and second electrodes; and a sensor integrated circuit electrically connected to the first and second electrodes of the integrated electrochemical sensor element. The integrated electrochemical sensor element and the sensor integrated circuit are provided in a single package.

Claims (44)

1. An electrochemical sensor device comprising:

an integrated electrochemical sensor element having: a substrate; first and second electrodes formed on the upper surface of the substrate; and an electrolyte layer formed on the first and second electrodes so as to electrically contact both the first and second electrodes;

a sensor integrated circuit electrically connected to the first and second electrodes of the integrated electrochemical sensor element, wherein the integrated electrochemical sensor element and the sensor integrated circuit are provided in a single package; and

an overmold having a cavity situated above the integrated electrochemical sensor element, wherein the electrolyte layer is formed in the cavity.

2. The electrochemical sensor device of claim 1 , wherein the integrated electrochemical sensor element further comprises:

a filter layer formed above the electrolyte layer, the filter layer being adapted to block one or more components of a gaseous medium.

3. The electrochemical sensor device of claim 1 , wherein the integrated electrochemical sensor element further comprises:

a reference electrode formed on the upper surface of the substrate below the electrolyte layer, the electrolyte layer electrically contacting the reference electrode,

and wherein the reference electrode is electrically connected to the integrated circuit.

4. The electrochemical sensor device of claim 1 , wherein the thickness of the electrolyte layer is 10 μm or less,

and wherein the area of the first and second electrodes electrically contacting the electrolyte layer is 11 mm 2 or less.

5. The electrochemical sensor device of claim 1 , wherein the upper surface of the substrate comprises a cavity within which the first and second electrodes are formed, and wherein the electrolyte layer is formed in the cavity so as to fill the cavity and cover the first and second electrodes.

6. The electrochemical sensor device of claim 1 , wherein the integrated electrochemical sensor element and the sensor integrated circuit are formed on a single die.

7. The electrochemical sensor device of claim 6 , wherein the sensor integrated circuit is electrically connected the first and second electrodes of the integrated electrochemical sensor element via one or more vias.

8. The electrochemical sensor device of claim 1 , wherein the integrated electrochemical sensor element and the sensor integrated circuit are formed on separate dies, and wherein the sensor integrated circuit is electrically connected the first and second electrodes of the integrated electrochemical sensor element via one or more bond wires.

9. The electrochemical sensor device of claim 1 further comprising an additional sensing element adapted to determine temperature.

10. A method of manufacturing a packaged electrochemical sensor device comprising the steps of:

forming an integrated electrochemical sensor element having: first and second electrodes on the upper surface of a substrate; and an electrolyte layer electrically contacting both the first and second electrodes;

electrically connecting the first and second electrodes to a sensor integrated circuit; and

placing the sensor integrated circuit and the integrated electrochemical sensor element in a single package;

providing for an overmold having a cavity situated above the integrated electrochemical sensor element, wherein the electrolyte layer is formed in the cavity.

11. The method of claim 10 , further comprising the step of forming a filter layer above the electrolyte layer, the filter layer being adapted to block one or more components of a gaseous medium.

12. The method of claim 10 , further comprising:

forming a reference electrode on the upper surface of the substrate below the electrolyte layer, the electrolyte layer electrically contacting the reference, and

electrically connecting the reference electrode to the sensor integrated circuit.

13. The method of claim 10 , comprising forming the integrated electrochemical sensor element and the sensor integrated circuit on a single die.

14. The method of claim 10 , comprising forming the integrated electrochemical sensor element and the sensor integrated circuit on separate dies,

and wherein electrically connecting the sensor integrated circuit to the first and second electrodes of the integrated electrochemical sensor element comprises electrically connecting the sensor integrated circuit to the first and second electrodes of the integrated electrochemical sensor element via one or more bond wires.

15. An electrochemical sensor device comprising:

an integrated electrochemical sensor element having: a substrate; first and second electrodes formed on the upper surface of the substrate; and an electrolyte layer formed on the first and second electrodes so as to electrically contact both the first and second electrodes; and

a sensor integrated circuit electrically connected to the first and second electrodes of the integrated electrochemical sensor element,

wherein the integrated electrochemical sensor element and the sensor integrated circuit are provided in a single package,

wherein the upper surface of the substrate comprises a cavity within which the first and second electrodes are formed,

wherein the electrolyte layer is formed in the cavity so as to fill the cavity and cover the first and second electrodes,

wherein the integrated electrochemical sensor element and the sensor integrated circuit are formed on a single die, and

wherein the substrate is a silicon substrate.

16. A method of manufacturing a packaged electrochemical sensor device comprising the steps of:

forming an integrated electrochemical sensor element having: first and second electrodes on the upper surface of a substrate; and an electrolyte layer electrically contacting both the first and second electrodes;

electrically connecting the first and second electrodes to a sensor integrated circuit;

placing the sensor integrated circuit and the integrated electrochemical sensor element in a single package; and

forming the integrated electrochemical sensor element and the sensor integrated circuit on a single die,

wherein the upper surface of the substrate comprises a cavity within which the first and second electrodes are formed,

wherein the electrolyte layer is formed in the cavity so as to fill the cavity and cover the first and second electrodes, and

wherein the substrate is a silicon substrate.

Assignments (13)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2020
From: AMS AG; AMS INTERNATIONAL AG; AMS SENSORS UK LIMITED; AMS SENSORS GERMANY GMBH
To: SCIOSENSE B.V.
Reel/Frame 052769/0820 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
PATENT RELEASE Recorded Aug 17, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 039707/0471 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 7, 2015
From: NXP B.V.
To: AMS INTERNATIONAL AG
Reel/Frame 036015/0613 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 18, 2014
From: MERZ, MATTHIAS; SOCCOL, DIMITRI
To: NXP B.V.
Reel/Frame 032236/0344 →