Magnetoresistive element and magnetic random access memory
View Patent ↗According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer.
1. A magnetoresistive element comprising:
a first magnetic layer having a variable magnetization direction;
a second magnetic layer having an invariable magnetization direction and including a nonmagnetic material film and a magnetic material film;
a first nonmagnetic layer arranged between the first magnetic layer and the second magnetic layer;
a second nonmagnetic layer arranged on a surface of the second magnetic layer opposite to a surface on which the first nonmagnetic layer is arranged; and
a third magnetic layer arranged on a surface of the second nonmagnetic layer opposite to a surface on which the second magnetic layer is arranged,
wherein the second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer.
2. The magnetoresistive element according to claim 1 , wherein the second nonmagnetic layer and the nonmagnetic material film are made of different materials.
3. The magnetoresistive element according to claim 1 , wherein the second magnetic layer includes an artificial lattice layer in which the nonmagnetic material film and the magnetic material film are stacked.
4. The magnetoresistive element according to claim 1 , wherein the nonmagnetic material film contains at least one material selected from the group including Pt and Pd.
5. The magnetoresistive element according to claim 1 , wherein the magnetic material film contains at least one material selected from the group including Co and Fe.
6. The magnetoresistive element according to claim 1 , wherein the second nonmagnetic layer contains at least one material selected from the group including Ru, Ta, W, Zr, Nb, Mo, and Hf.
7. The magnetoresistive element according to claim 1 , wherein the second nonmagnetic layer is thicker than the nonmagnetic material film.
8. The magnetoresistive element according to claim 1 , wherein the second nonmagnetic layer is thinner than the nonmagnetic material film.
9. The magnetoresistive element according to claim 1 , wherein the third magnetic layer includes an artificial lattice layer in which a nonmagnetic material film and a magnetic material film are stacked.
10. The magnetoresistive element according to claim 9 , wherein the nonmagnetic material film contains at least one material selected from the group including Pt and Pd.
11. The magnetoresistive element according to claim 9 , wherein the magnetic material film contains at least one material selected from the group including Co and Fe.
12. A magnetoresistive element comprising:
a first magnetic layer having a variable magnetization direction;
a second magnetic layer having an invariable magnetization direction and containing an alloy of a magnetic material and a nonmagnetic material;
a first nonmagnetic layer arranged between the first magnetic layer and the second magnetic layer;
a second nonmagnetic layer arranged on a surface of the second magnetic layer opposite to a surface on which the first nonmagnetic layer is arranged; and
a third magnetic layer arranged on a surface of the second nonmagnetic layer opposite to a surface on which the second magnetic layer is arranged,
wherein the second nonmagnetic layer is in contact with an upper region of the alloy, and a content of the magnetic material in the upper region is smaller than a stoichiometric composition.
13. The magnetoresistive element according to claim 12 , wherein a content of the magnetic material is smaller in the upper region of the alloy than in a lower region of the alloy on a side of the first nonmagnetic layer.
14. The magnetoresistive element according to claim 12 , wherein a content of the magnetic material of the alloy gradually decreases from a side of the first nonmagnetic layer to a side of the second nonmagnetic layer.
15. The magnetoresistive element according to claim 12 , wherein the nonmagnetic material contains at least one material selected from the group including Pt and Pd.
16. The magnetoresistive element according to claim 12 , wherein the magnetic material contains at least one material selected from the group including Co and Fe.
17. The magnetoresistive element according to claim 12 , wherein the second nonmagnetic layer contains at least one material selected from the group including Ru, Ta, W, Zr, Nb, Mo, and Hf.